All MOSFET. R6030ENZ1 Datasheet

 

R6030ENZ1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: R6030ENZ1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 1900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO-247

 R6030ENZ1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R6030ENZ1 Datasheet (PDF)

 ..1. Size:864K  rohm
 r6030enz1.pdf

R6030ENZ1 R6030ENZ1

R6030ENZ1 Nch 600V 30A Power MOSFET Data SheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.130WID30A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea

 ..2. Size:303K  inchange semiconductor
 r6030enz1.pdf

R6030ENZ1 R6030ENZ1

isc N-Channel MOSFET Transistor R6030ENZ1FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. Size:892K  rohm
 r6030enz.pdf

R6030ENZ1 R6030ENZ1

R6030ENZ Nch 600V 30A Power MOSFET Data SheetlOutlineVDSS600V TO-3PFRDS(on) (Max.)0.130WID30A(1) (2) PD120W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead

 6.2. Size:265K  inchange semiconductor
 r6030enz.pdf

R6030ENZ1 R6030ENZ1

isc N-Channel MOSFET Transistor R6030ENZFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.1. Size:824K  rohm
 r6030enx.pdf

R6030ENZ1 R6030ENZ1

R6030ENX Nch 600V 30A Power MOSFET Data SheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)0.130WID30A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.2) Fast switching speed.(1) Gate (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 20V.(3) Source 4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea

 7.2. Size:252K  inchange semiconductor
 r6030enx.pdf

R6030ENZ1 R6030ENZ1

isc N-Channel MOSFET Transistor R6030ENXFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HUFA76437S3ST | SUN05A50ZD | IXFG55N50 | 2SJ347

 

 
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