R6030ENZ1 MOSFET Datasheet: N-Ch, 600V, 30A. Full specification with pinout and replacement list

R6030ENZ1 Specs and Replacement

Type Designator: R6030ENZ1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 1900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO-247

R6030ENZ1 substitution

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R6030ENZ1 datasheet

..1. Size:864K rohm
r6030enz1.pdf pdf_icon

R6030ENZ1 Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.130W ID 30A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea... See More ⇒

..2. Size:303K inchange semiconductor
r6030enz1.pdf pdf_icon

isc N-Channel MOSFET Transistor R6030ENZ1 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

6.1. Size:892K rohm
r6030enz.pdf pdf_icon

R6030ENZ Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V TO-3PF RDS(on) (Max.) 0.130W ID 30A (1) (2) PD 120W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead... See More ⇒

6.2. Size:265K inchange semiconductor
r6030enz.pdf pdf_icon

isc N-Channel MOSFET Transistor R6030ENZ FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒