R6030ENZ1 - параметры транзистора MOSFET, его аналоги, datasheet

R6030ENZ1 Datasheet (PDF)

..1. Size:864K rohm
r6030enz1.pdf pdf_icon

R6030ENZ1 Nch 600V 30A Power MOSFET Data SheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.130WID30A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea

..2. Size:303K inchange semiconductor
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isc N-Channel MOSFET Transistor R6030ENZ1FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

6.1. Size:892K rohm
r6030enz.pdf pdf_icon

R6030ENZ Nch 600V 30A Power MOSFET Data SheetlOutlineVDSS600V TO-3PFRDS(on) (Max.)0.130WID30A(1) (2) PD120W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead

6.2. Size:265K inchange semiconductor
r6030enz.pdf pdf_icon

isc N-Channel MOSFET Transistor R6030ENZFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo