R6046FNZC8 PDF and Equivalents Search

 

R6046FNZC8 Specs and Replacement

Type Designator: R6046FNZC8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 3600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.093 Ohm

Package: TO-3PF

R6046FNZC8 substitution

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R6046FNZC8 datasheet

 ..1. Size:4065K  rohm
r6046fnzc8.pdf pdf_icon

R6046FNZC8

R6046FNZ Datasheet Nch 600V 46A Power MOSFET lOutline l TO-3PF VDSS 600V RDS(on)(Max.) 93m ID 46A PD 120W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed ... See More ⇒

 6.1. Size:1170K  rohm
r6046fnz.pdf pdf_icon

R6046FNZC8

Data Sheet 10V Drive Nch MOSFET R6046FNZ Structure Dimensions (Unit mm) Silicon N-channel MOSFET 5.5 TO-3PF 3.0 15.5 3.6 Features 1) Low on-resistance. 2) Low input capacitance. 2.0 2.0 3.0 3) High ESD. 0.75 (1) Gate (1) (2) (3) 0.9 (2) Drain Application 5.45 5.45 (3) Source Switching Packaging specifications Inner circuit Package Bulk Type ... See More ⇒

 6.2. Size:754K  rohm
r6046fnz1.pdf pdf_icon

R6046FNZC8

R6046FNZ1 Nch 600V 46A Power MOSFET Datasheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.098W ID 46A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead ... See More ⇒

 9.1. Size:748K  rohm
r6046anz1.pdf pdf_icon

R6046FNZC8

R6046ANZ1 Nch 600V 46A Power MOSFET Datasheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.09W ID 46A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead ... See More ⇒

Detailed specifications: R6025FNZ1, R6030ENX, R6030ENZ, R6030ENZ1, R6035ENZ, R6035ENZ1, R6046ANZ1, R6046FNZ1, AO4407A, R6047ENZ1, R6076ENZ1, R8005ANX, R8010ANX, R9521, R9522, 2SJ455, 2SK0123

Keywords - R6046FNZC8 MOSFET specs

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