R6046FNZC8 MOSFET. Datasheet pdf. Equivalent
Type Designator: R6046FNZC8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 46 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 150 nC
trⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 3600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.093 Ohm
Package: TO-3PF
R6046FNZC8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6046FNZC8 Datasheet (PDF)
r6046fnzc8.pdf
R6046FNZDatasheetNch 600V 46A Power MOSFETlOutlinel TO-3PFVDSS600VRDS(on)(Max.)93m ID46A PD120W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed
r6046fnz.pdf
Data Sheet10V Drive Nch MOSFET R6046FNZ Structure Dimensions (Unit : mm)Silicon N-channel MOSFET 5.5TO-3PF3.015.53.6Features1) Low on-resistance.2) Low input capacitance.2.02.03.03) High ESD.0.75(1) Gate(1) (2) (3)0.9(2) Drain Application 5.45 5.45(3) SourceSwitching Packaging specifications Inner circuitPackage BulkType
r6046fnz1.pdf
R6046FNZ1 Nch 600V 46A Power MOSFET DatasheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.098WID46A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead
r6046anz1.pdf
R6046ANZ1 Nch 600V 46A Power MOSFET DatasheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.09WID46A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead
r6046anz.pdf
Data Sheet10V Drive Nch MOSFET R6046ANZ Structure Dimensions (Unit : mm)Silicon N-channel MOSFET 5.5TO-3PF3.015.53.6Features1) Low on-resistance.2) Low input capacitance.2.02.03.03) High ESD.0.75(1) Gate(1) (2) (3)0.9(2) Drain Application 5.45 5.45(3) SourceSwitching Packaging specifications Inner circuitPackage BulkType
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
