R6046FNZC8 - описание и поиск аналогов

R6046FNZ Datasheet Nch 600V 46A Power MOSFET lOutline l TO-3PF VDSS 600V RDS(on)(Max.) 93m ID 46A PD 120W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed

Data Sheet 10V Drive Nch MOSFET R6046FNZ Structure Dimensions (Unit mm) Silicon N-channel MOSFET 5.5 TO-3PF 3.0 15.5 3.6 Features 1) Low on-resistance. 2) Low input capacitance. 2.0 2.0 3.0 3) High ESD. 0.75 (1) Gate (1) (2) (3) 0.9 (2) Drain Application 5.45 5.45 (3) Source Switching Packaging specifications Inner circuit Package Bulk Type

R6046FNZ1 Nch 600V 46A Power MOSFET Datasheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.098W ID 46A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead

R6046ANZ1 Nch 600V 46A Power MOSFET Datasheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.09W ID 46A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead

Data Sheet 10V Drive Nch MOSFET R6046ANZ Structure Dimensions (Unit mm) Silicon N-channel MOSFET 5.5 TO-3PF 3.0 15.5 3.6 Features 1) Low on-resistance. 2) Low input capacitance. 2.0 2.0 3.0 3) High ESD. 0.75 (1) Gate (1) (2) (3) 0.9 (2) Drain Application 5.45 5.45 (3) Source Switching Packaging specifications Inner circuit Package Bulk Type