R6076ENZ1 MOSFET Datasheet: N-Ch, 600V, 76A. Full specification with pinout and replacement list

R6076ENZ1 Specs and Replacement

Type Designator: R6076ENZ1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 76 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 4700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: TO-247

R6076ENZ1 substitution

- MOSFET ⓘ Cross-Reference Search

R6076ENZ1 datasheet

..1. Size:901K rohm
r6076enz1.pdf pdf_icon

R6076ENZ1 Nch 600V 76A Power MOSFET Data Sheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.042W ID 76A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea... See More ⇒

..2. Size:303K inchange semiconductor
r6076enz1.pdf pdf_icon

isc N-Channel MOSFET Transistor R6076ENZ1 FEATURES Drain Current I = 76A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 42m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

Detailed specifications: R6030ENZ, R6030ENZ1, R6035ENZ, R6035ENZ1, R6046ANZ1, R6046FNZ1, R6046FNZC8, R6047ENZ1, IRFP064N, R8005ANX, R8010ANX, R9521, R9522, 2SJ455, 2SK0123, BSC0906NS, IPD09N03LA