R6076ENZ1 MOSFET. Datasheet pdf. Equivalent
Type Designator: R6076ENZ1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 76 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 4700 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: TO-247
R6076ENZ1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6076ENZ1 Datasheet (PDF)
r6076enz1.pdf
R6076ENZ1 Nch 600V 76A Power MOSFET Data SheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.042WID76A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea
r6076enz1.pdf
isc N-Channel MOSFET Transistor R6076ENZ1FEATURESDrain Current I = 76A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 42m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
