All MOSFET. R6076ENZ1 Datasheet

 

R6076ENZ1 Datasheet and Replacement


   Type Designator: R6076ENZ1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 76 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 260 nC
   tr ⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 4700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO-247
 

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R6076ENZ1 Datasheet (PDF)

 ..1. Size:901K  rohm
 r6076enz1.pdf pdf_icon

R6076ENZ1

R6076ENZ1 Nch 600V 76A Power MOSFET Data SheetlOutlineVDSS600V TO-247RDS(on) (Max.)0.042WID76A(3) PD120W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea

 ..2. Size:303K  inchange semiconductor
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R6076ENZ1

isc N-Channel MOSFET Transistor R6076ENZ1FEATURESDrain Current I = 76A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 42m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: R6030ENZ , R6030ENZ1 , R6035ENZ , R6035ENZ1 , R6046ANZ1 , R6046FNZ1 , R6046FNZC8 , R6047ENZ1 , 5N50 , R8005ANX , R8010ANX , R9521 , R9522 , 2SJ455 , 2SK0123 , BSC0906NS , IPD09N03LA .

History: JFFC10N65D | IRF8788PBF

Keywords - R6076ENZ1 MOSFET datasheet

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