All MOSFET. R8010ANX Datasheet

 

R8010ANX Datasheet and Replacement


   Type Designator: R8010ANX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 830 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm
   Package: TO-220FM
 

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R8010ANX Datasheet (PDF)

 ..1. Size:829K  rohm
 r8010anx.pdf pdf_icon

R8010ANX

R8010ANX Nch 800V 10A Power MOSFET DatasheetlOutlineVDSS800VTO-220FMRDS(on) (Max.)0.56WID10A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead p

 ..2. Size:252K  inchange semiconductor
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R8010ANX

isc N-Channel MOSFET Transistor R8010ANXFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: R6035ENZ , R6035ENZ1 , R6046ANZ1 , R6046FNZ1 , R6046FNZC8 , R6047ENZ1 , R6076ENZ1 , R8005ANX , BS170 , R9521 , R9522 , 2SJ455 , 2SK0123 , BSC0906NS , IPD09N03LA , IPF09N03LA , IPS09N03LA .

History: NCEP1570GU | HSM1564 | R8008ANJ | 1N80 | WMR12N03T1 | STK7002 | HSBA6016

Keywords - R8010ANX MOSFET datasheet

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