R8010ANX MOSFET Datasheet: N-Ch, 800V, 10A. Full specification with pinout and replacement list

R8010ANX Specs and Replacement

Type Designator: R8010ANX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 830 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm

Package: TO-220FM

R8010ANX substitution

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R8010ANX datasheet

..1. Size:829K rohm
r8010anx.pdf pdf_icon

R8010ANX Nch 800V 10A Power MOSFET Datasheet lOutline VDSS 800V TO-220FM RDS(on) (Max.) 0.56W ID 10A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead p... See More ⇒

..2. Size:252K inchange semiconductor
r8010anx.pdf pdf_icon

isc N-Channel MOSFET Transistor R8010ANX FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 0.56 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

Detailed specifications: R6035ENZ, R6035ENZ1, R6046ANZ1, R6046FNZ1, R6046FNZC8, R6047ENZ1, R6076ENZ1, R8005ANX, IRF730, R9521, R9522, 2SJ455, 2SK0123, BSC0906NS, IPD09N03LA, IPF09N03LA, IPS09N03LA