All MOSFET. RFD3N08LSM Datasheet

 

RFD3N08LSM Datasheet and Replacement


   Type Designator: RFD3N08LSM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 55(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO252AA
 

 RFD3N08LSM substitution

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RFD3N08LSM Datasheet (PDF)

 6.1. Size:365K  fairchild semi
 rfd3n08l-sm.pdf pdf_icon

RFD3N08LSM

RFD3N08L, RFD3N08LSMData Sheet July 1999 File Number 2836.43A, 80V, 0.800 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 3A, 80VTitle The RFD3N08L and RFD3N08LSM are N-Channel rDS(ON) = 0.800enhancement mode silicon gate power field effect transistors FD3 Temperature Compensating PSPICE Modelspecifically designed for use with logic level (5V) driving 8L,

Datasheet: RFD16N05SM , RFD16N06LE , RFD16N06LESM , RFD3055 , RFD3055LE , RFD3055LESM , RFD3055SM , RFD3N08L , IRFP460 , RFD4N06L , RFD4N06LSM , RFD7N10LE , RFD7N10LESM , RFD8P05 , RFD8P05SM , RFD8P06E , RFD8P06ESM .

History: IPB407N30N

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