All MOSFET. IPF09N03LA Datasheet

 

IPF09N03LA Datasheet and Replacement


   Type Designator: IPF09N03LA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.6 nS
   Cossⓘ - Output Capacitance: 474 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: TO252
 

 IPF09N03LA substitution

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IPF09N03LA Datasheet (PDF)

 ..1. Size:413K  infineon
 ipd09n03la ipf09n03la ips09n03la ipu09n03la.pdf pdf_icon

IPF09N03LA

IPD09N03LA IPF09N03LAIPS09N03LA IPU09N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 8.6mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C

 9.1. Size:538K  1
 ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf pdf_icon

IPF09N03LA

Type IPD090N03L G IPF090N03L GIPS090N03L G IPU090N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 9mDS(on),max Optimized technology for DC/DC convertersI 40 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low

Datasheet: R8005ANX , R8010ANX , R9521 , R9522 , 2SJ455 , 2SK0123 , BSC0906NS , IPD09N03LA , IRF540N , IPS09N03LA , IPU09N03LA , NTD4809NH , NTD4809NHG , SI2300A , SPP07N60C2 , SPB07N60C2 , SPA07N60C2 .

History: IRFPS3810 | MT4435ACTR | RUH1H150R | IRF7530 | IXFP72N20X3M | IRHN7054 | SSF2N60D1

Keywords - IPF09N03LA MOSFET datasheet

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