IPS09N03LA Datasheet and Replacement
Type Designator: IPS09N03LA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5.6 nS
Cossⓘ - Output Capacitance: 474 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: TO251
IPS09N03LA substitution
IPS09N03LA Datasheet (PDF)
ipd09n03la ipf09n03la ips09n03la ipu09n03la.pdf

IPD09N03LA IPF09N03LAIPS09N03LA IPU09N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 8.6mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C
ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf

Type IPD090N03L G IPF090N03L GIPS090N03L G IPU090N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 9mDS(on),max Optimized technology for DC/DC convertersI 40 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low
ips090n03l.pdf

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Datasheet: R8010ANX , R9521 , R9522 , 2SJ455 , 2SK0123 , BSC0906NS , IPD09N03LA , IPF09N03LA , 50N06 , IPU09N03LA , NTD4809NH , NTD4809NHG , SI2300A , SPP07N60C2 , SPB07N60C2 , SPA07N60C2 , RDX050N50FU6 .
History: FQB4P25TM | IRF720S | IRF1010NL
Keywords - IPS09N03LA MOSFET datasheet
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History: FQB4P25TM | IRF720S | IRF1010NL



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