RFD4N06L PDF and Equivalents Search

 

RFD4N06L Specs and Replacement

Type Designator: RFD4N06L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO251AA

RFD4N06L substitution

- MOSFET ⓘ Cross-Reference Search

 

RFD4N06L datasheet

 0.1. Size:43K  intersil
 rfd4n06l-sm.pdf pdf_icon

RFD4N06L

RFD4N06L, RFD4N06LSM Data Sheet June 1999 File Number 2837.1 4A, 60V, 0.600 Ohm, Logic Level, Features N-Channel Power MOSFETs 4A, 60V The RFD4N06L, RFD4N06LSM are N-Channel enhancement rDS(ON) = 0.600 mode silicon gate power field effect transistors specifically Design Optimized for 5 Volt Gate Drive designed for use with logic level (5 volt) driving sources in applica... See More ⇒

Detailed specifications: RFD16N06LE, RFD16N06LESM, RFD3055, RFD3055LE, RFD3055LESM, RFD3055SM, RFD3N08L, RFD3N08LSM, IRF1404, RFD4N06LSM, RFD7N10LE, RFD7N10LESM, RFD8P05, RFD8P05SM, RFD8P06E, RFD8P06ESM, RFD8P06LE

Keywords - RFD4N06L MOSFET specs

 RFD4N06L cross reference

 RFD4N06L equivalent finder

 RFD4N06L pdf lookup

 RFD4N06L substitution

 RFD4N06L replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.