RFD4N06L PDF and Equivalents Search

 

RFD4N06L Specs and Replacement


   Type Designator: RFD4N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 130 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO251AA
 

 RFD4N06L substitution

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RFD4N06L datasheet

 0.1. Size:43K  intersil
 rfd4n06l-sm.pdf pdf_icon

RFD4N06L

RFD4N06L, RFD4N06LSM Data Sheet June 1999 File Number 2837.1 4A, 60V, 0.600 Ohm, Logic Level, Features N-Channel Power MOSFETs 4A, 60V The RFD4N06L, RFD4N06LSM are N-Channel enhancement rDS(ON) = 0.600 mode silicon gate power field effect transistors specifically Design Optimized for 5 Volt Gate Drive designed for use with logic level (5 volt) driving sources in applica... See More ⇒

Detailed specifications: RFD16N06LE , RFD16N06LESM , RFD3055 , RFD3055LE , RFD3055LESM , RFD3055SM , RFD3N08L , RFD3N08LSM , IRF1404 , RFD4N06LSM , RFD7N10LE , RFD7N10LESM , RFD8P05 , RFD8P05SM , RFD8P06E , RFD8P06ESM , RFD8P06LE .

History: FDC3612

Keywords - RFD4N06L MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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