All MOSFET. RFD4N06L Datasheet

 

RFD4N06L MOSFET. Datasheet pdf. Equivalent

Type Designator: RFD4N06L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO251AA

RFD4N06L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFD4N06L Datasheet (PDF)

1.1. rfd4n06l-sm.pdf Size:43K _intersil

RFD4N06L
RFD4N06L

RFD4N06L, RFD4N06LSM Data Sheet June 1999 File Number 2837.1 4A, 60V, 0.600 Ohm, Logic Level, Features N-Channel Power MOSFETs • 4A, 60V The RFD4N06L, RFD4N06LSM are N-Channel enhancement • rDS(ON) = 0.600Ω mode silicon gate power field effect transistors specifically • Design Optimized for 5 Volt Gate Drive designed for use with logic level (5 volt) driving sources in applica

Datasheet: RFD16N06LE , RFD16N06LESM , RFD3055 , RFD3055LE , RFD3055LESM , RFD3055SM , RFD3N08L , RFD3N08LSM , IRFP460 , RFD4N06LSM , RFD7N10LE , RFD7N10LESM , RFD8P05 , RFD8P05SM , RFD8P06E , RFD8P06ESM , RFD8P06LE .

 


RFD4N06L
  RFD4N06L
  RFD4N06L
 

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