RDX050N50FU6 PDF and Equivalents Search

 

RDX050N50FU6 Specs and Replacement

Type Designator: RDX050N50FU6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220FM

RDX050N50FU6 substitution

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RDX050N50FU6 datasheet

 ..1. Size:48K  rohm
 rdx050n50fu6.pdf pdf_icon

RDX050N50FU6

RDX050N50 Transistors 10V Drive Nch MOS FET RDX050N50 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Lowon-resistance. 1.2 2) Low input capacitance. 1.3 3) Excellent resistance to damage from static electricity. 0.8 (1)Gate 2.54 2.54 0.75 2.6 (2)Drain (1) (2) (3) Applications (3)Source Switching Packagingspecificat... See More ⇒

Detailed specifications: IPS09N03LA, IPU09N03LA, NTD4809NH, NTD4809NHG, SI2300A, SPP07N60C2, SPB07N60C2, SPA07N60C2, IRFP260N, RDX060N60FU6, RDX080N50FU6, RDX100N60FU6, RDX120N50FU6, RE1C001UN, RE1C001ZP, RE1C002UN, RE1C002ZP

Keywords - RDX050N50FU6 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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