RDX050N50FU6 MOSFET. Datasheet pdf. Equivalent
Type Designator: RDX050N50FU6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220FM
RDX050N50FU6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RDX050N50FU6 Datasheet (PDF)
rdx050n50fu6.pdf
RDX050N50Transistors10V Drive Nch MOS FET RDX050N50Structure External dimensions (Unit : mm)Silicon N-channel MOS FETTO-220FM10.0 3.2 4.52.8Features1) Lowon-resistance.1.22) Low input capacitance. 1.33) Excellent resistance to damage from static electricity.0.8(1)Gate2.54 2.54 0.75 2.6(2)Drain (1) (2) (3)Applications(3)SourceSwitchingPackagingspecificat
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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