All MOSFET. RDX050N50FU6 Datasheet

 

RDX050N50FU6 Datasheet and Replacement


   Type Designator: RDX050N50FU6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-220FM
 

 RDX050N50FU6 substitution

   - MOSFET ⓘ Cross-Reference Search

 

RDX050N50FU6 Datasheet (PDF)

 ..1. Size:48K  rohm
 rdx050n50fu6.pdf pdf_icon

RDX050N50FU6

RDX050N50Transistors10V Drive Nch MOS FET RDX050N50Structure External dimensions (Unit : mm)Silicon N-channel MOS FETTO-220FM10.0 3.2 4.52.8Features1) Lowon-resistance.1.22) Low input capacitance. 1.33) Excellent resistance to damage from static electricity.0.8(1)Gate2.54 2.54 0.75 2.6(2)Drain (1) (2) (3)Applications(3)SourceSwitchingPackagingspecificat

Datasheet: IPS09N03LA , IPU09N03LA , NTD4809NH , NTD4809NHG , SI2300A , SPP07N60C2 , SPB07N60C2 , SPA07N60C2 , IRFP260N , RDX060N60FU6 , RDX080N50FU6 , RDX100N60FU6 , RDX120N50FU6 , RE1C001UN , RE1C001ZP , RE1C002UN , RE1C002ZP .

Keywords - RDX050N50FU6 MOSFET datasheet

 RDX050N50FU6 cross reference
 RDX050N50FU6 equivalent finder
 RDX050N50FU6 lookup
 RDX050N50FU6 substitution
 RDX050N50FU6 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
Back to Top

 


 
.