All MOSFET. RDX080N50FU6 Datasheet

 

RDX080N50FU6 Datasheet and Replacement


   Type Designator: RDX080N50FU6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220FM
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RDX080N50FU6 Datasheet (PDF)

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RDX080N50FU6

RDX080N50 Transistors 10V Drive Nch MOS FET RDX080N50 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TO-220FM10.0 3.2 4.52.8 Features 1) Low on-resistance. 1.22) Low input capacitance. 1.33) Excellent resistance to damage from static electricity. 0.8(1)Gate2.54 2.54 0.75 2.6(2)Drain (1) (2) (3) Applications(3)SourceSwitching

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AOL1446 | IRFS510A | P3710BTF

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