All MOSFET. RDX080N50FU6 Datasheet

 

RDX080N50FU6 Datasheet and Replacement


   Type Designator: RDX080N50FU6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220FM
 

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RDX080N50FU6 Datasheet (PDF)

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RDX080N50FU6

RDX080N50 Transistors 10V Drive Nch MOS FET RDX080N50 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TO-220FM10.0 3.2 4.52.8 Features 1) Low on-resistance. 1.22) Low input capacitance. 1.33) Excellent resistance to damage from static electricity. 0.8(1)Gate2.54 2.54 0.75 2.6(2)Drain (1) (2) (3) Applications(3)SourceSwitching

Datasheet: NTD4809NH , NTD4809NHG , SI2300A , SPP07N60C2 , SPB07N60C2 , SPA07N60C2 , RDX050N50FU6 , RDX060N60FU6 , AON6414A , RDX100N60FU6 , RDX120N50FU6 , RE1C001UN , RE1C001ZP , RE1C002UN , RE1C002ZP , RE1E002SP , RE1J002YN .

History: RJK6035DPP-E0 | STB20NM50-1 | JSM2302 | SWD2N60DC | NTTFS4C10NTAG | TMAN20N50 | STB30NF10T4

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