RDX100N60FU6 Datasheet. Specs and Replacement
Type Designator: RDX100N60FU6 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO-220FM
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RDX100N60FU6 substitution
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RDX100N60FU6 datasheet
rdx100n60fu6.pdf
RDX100N60 Transistors 10V Drive Nch MOS FET RDX100N60 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 1.3 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. 0.8 (1)Gate 2.54 2.54 0.75 2.6 (2)Drain (1) (2) (3) Applications (3)Source Switching ... See More ⇒
Detailed specifications: NTD4809NHG, SI2300A, SPP07N60C2, SPB07N60C2, SPA07N60C2, RDX050N50FU6, RDX060N60FU6, RDX080N50FU6, IRF3710, RDX120N50FU6, RE1C001UN, RE1C001ZP, RE1C002UN, RE1C002ZP, RE1E002SP, RE1J002YN, RE1L002SN
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