RDX100N60FU6 PDF Specs and Replacement
Type Designator: RDX100N60FU6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO-220FM
RDX100N60FU6 substitution
RDX100N60FU6 PDF Specs
rdx100n60fu6.pdf
RDX100N60 Transistors 10V Drive Nch MOS FET RDX100N60 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 1.3 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. 0.8 (1)Gate 2.54 2.54 0.75 2.6 (2)Drain (1) (2) (3) Applications (3)Source Switching ... See More ⇒
Detailed specifications: NTD4809NHG , SI2300A , SPP07N60C2 , SPB07N60C2 , SPA07N60C2 , RDX050N50FU6 , RDX060N60FU6 , RDX080N50FU6 , IRF3710 , RDX120N50FU6 , RE1C001UN , RE1C001ZP , RE1C002UN , RE1C002ZP , RE1E002SP , RE1J002YN , RE1L002SN .
History: DH065N06D
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: DH065N06D
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MOSFET: AP4688S | AP4606 | AP4580
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