All MOSFET. RDX100N60FU6 Datasheet

 

RDX100N60FU6 Datasheet and Replacement


   Type Designator: RDX100N60FU6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-220FM
 

 RDX100N60FU6 substitution

   - MOSFET ⓘ Cross-Reference Search

 

RDX100N60FU6 Datasheet (PDF)

 ..1. Size:59K  rohm
 rdx100n60fu6.pdf pdf_icon

RDX100N60FU6

RDX100N60 Transistors 10V Drive Nch MOS FET RDX100N60 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TO-220FM10.0 3.2 4.52.8 Features 1) Low on-resistance. 1.21.32) Low input capacitance. 3) Excellent resistance to damage from static electricity. 0.8(1)Gate 2.54 2.54 0.75 2.6(2)Drain (1) (2) (3) Applications(3)SourceSwitching

Datasheet: NTD4809NHG , SI2300A , SPP07N60C2 , SPB07N60C2 , SPA07N60C2 , RDX050N50FU6 , RDX060N60FU6 , RDX080N50FU6 , IRFB4115 , RDX120N50FU6 , RE1C001UN , RE1C001ZP , RE1C002UN , RE1C002ZP , RE1E002SP , RE1J002YN , RE1L002SN .

Keywords - RDX100N60FU6 MOSFET datasheet

 RDX100N60FU6 cross reference
 RDX100N60FU6 equivalent finder
 RDX100N60FU6 lookup
 RDX100N60FU6 substitution
 RDX100N60FU6 replacement

 

 
Back to Top

 


 
.