All MOSFET. RDX100N60FU6 Datasheet

 

RDX100N60FU6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RDX100N60FU6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-220FM

 RDX100N60FU6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RDX100N60FU6 Datasheet (PDF)

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 rdx100n60fu6.pdf

RDX100N60FU6 RDX100N60FU6

RDX100N60 Transistors 10V Drive Nch MOS FET RDX100N60 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TO-220FM10.0 3.2 4.52.8 Features 1) Low on-resistance. 1.21.32) Low input capacitance. 3) Excellent resistance to damage from static electricity. 0.8(1)Gate 2.54 2.54 0.75 2.6(2)Drain (1) (2) (3) Applications(3)SourceSwitching

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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