All MOSFET. RDX120N50FU6 Datasheet

 

RDX120N50FU6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RDX120N50FU6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-220FM

 RDX120N50FU6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RDX120N50FU6 Datasheet (PDF)

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 rdx120n50fu6.pdf

RDX120N50FU6 RDX120N50FU6

RDX120N50 Transistors 10V Drive Nch MOS FET RDX120N50 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TO-220FM 10.0 3.2 4.52.8 Features 1) Low on-resistance. 2) Low input capacitance. 1.21.33) Excellent resistance to damage from static electricity. 0.8 (1)Gate2.54 2.54 0.75 2.6(2)Drain (1) (2) (3) Applications(3)SourceSwitching

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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