All MOSFET. RDX120N50FU6 Datasheet

 

RDX120N50FU6 Datasheet and Replacement


   Type Designator: RDX120N50FU6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-220FM
 

 RDX120N50FU6 substitution

   - MOSFET ⓘ Cross-Reference Search

 

RDX120N50FU6 Datasheet (PDF)

 ..1. Size:82K  rohm
 rdx120n50fu6.pdf pdf_icon

RDX120N50FU6

RDX120N50 Transistors 10V Drive Nch MOS FET RDX120N50 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TO-220FM 10.0 3.2 4.52.8 Features 1) Low on-resistance. 2) Low input capacitance. 1.21.33) Excellent resistance to damage from static electricity. 0.8 (1)Gate2.54 2.54 0.75 2.6(2)Drain (1) (2) (3) Applications(3)SourceSwitching

Datasheet: SI2300A , SPP07N60C2 , SPB07N60C2 , SPA07N60C2 , RDX050N50FU6 , RDX060N60FU6 , RDX080N50FU6 , RDX100N60FU6 , IRFB4227 , RE1C001UN , RE1C001ZP , RE1C002UN , RE1C002ZP , RE1E002SP , RE1J002YN , RE1L002SN , RF1S25N06 .

Keywords - RDX120N50FU6 MOSFET datasheet

 RDX120N50FU6 cross reference
 RDX120N50FU6 equivalent finder
 RDX120N50FU6 lookup
 RDX120N50FU6 substitution
 RDX120N50FU6 replacement

 

 
Back to Top

 


 
.