RDX120N50FU6 Datasheet. Specs and Replacement

Type Designator: RDX120N50FU6  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO-220FM

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RDX120N50FU6 datasheet

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RDX120N50FU6

RDX120N50 Transistors 10V Drive Nch MOS FET RDX120N50 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 2) Low input capacitance. 1.2 1.3 3) Excellent resistance to damage from static electricity. 0.8 (1)Gate 2.54 2.54 0.75 2.6 (2)Drain (1) (2) (3) Applications (3)Source Switching ... See More ⇒

Detailed specifications: SI2300A, SPP07N60C2, SPB07N60C2, SPA07N60C2, RDX050N50FU6, RDX060N60FU6, RDX080N50FU6, RDX100N60FU6, 10N60, RE1C001UN, RE1C001ZP, RE1C002UN, RE1C002ZP, RE1E002SP, RE1J002YN, RE1L002SN, RF1S25N06

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