RDX120N50FU6 PDF and Equivalents Search

 

RDX120N50FU6 PDF Specs and Replacement


   Type Designator: RDX120N50FU6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-220FM
 

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RDX120N50FU6 PDF Specs

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RDX120N50FU6

RDX120N50 Transistors 10V Drive Nch MOS FET RDX120N50 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 2) Low input capacitance. 1.2 1.3 3) Excellent resistance to damage from static electricity. 0.8 (1)Gate 2.54 2.54 0.75 2.6 (2)Drain (1) (2) (3) Applications (3)Source Switching ... See More ⇒

Detailed specifications: SI2300A , SPP07N60C2 , SPB07N60C2 , SPA07N60C2 , RDX050N50FU6 , RDX060N60FU6 , RDX080N50FU6 , RDX100N60FU6 , 10N60 , RE1C001UN , RE1C001ZP , RE1C002UN , RE1C002ZP , RE1E002SP , RE1J002YN , RE1L002SN , RF1S25N06 .

History: SI2300A

Keywords - RDX120N50FU6 MOSFET specs

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