All MOSFET. RFD4N06LSM Datasheet

 

RFD4N06LSM Datasheet and Replacement


   Type Designator: RFD4N06LSM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 130 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO252AA
 

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RFD4N06LSM Datasheet (PDF)

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RFD4N06LSM

RFD4N06L, RFD4N06LSMData Sheet June 1999 File Number 2837.14A, 60V, 0.600 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 4A, 60VThe RFD4N06L, RFD4N06LSM are N-Channel enhancement rDS(ON) = 0.600mode silicon gate power field effect transistors specifically Design Optimized for 5 Volt Gate Drivedesigned for use with logic level (5 volt) driving sources inapplica

Datasheet: RFD16N06LESM , RFD3055 , RFD3055LE , RFD3055LESM , RFD3055SM , RFD3N08L , RFD3N08LSM , RFD4N06L , IRFP260N , RFD7N10LE , RFD7N10LESM , RFD8P05 , RFD8P05SM , RFD8P06E , RFD8P06ESM , RFD8P06LE , RFD8P06LESM .

History: R6530KNZ1

Keywords - RFD4N06LSM MOSFET datasheet

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