RFD4N06LSM Specs and Replacement

Type Designator: RFD4N06LSM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO252AA

RFD4N06LSM substitution

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RFD4N06LSM datasheet

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 rfd4n06l-sm.pdf pdf_icon

RFD4N06LSM

RFD4N06L, RFD4N06LSM Data Sheet June 1999 File Number 2837.1 4A, 60V, 0.600 Ohm, Logic Level, Features N-Channel Power MOSFETs 4A, 60V The RFD4N06L, RFD4N06LSM are N-Channel enhancement rDS(ON) = 0.600 mode silicon gate power field effect transistors specifically Design Optimized for 5 Volt Gate Drive designed for use with logic level (5 volt) driving sources in applica... See More ⇒

Detailed specifications: RFD16N06LESM, RFD3055, RFD3055LE, RFD3055LESM, RFD3055SM, RFD3N08L, RFD3N08LSM, RFD4N06L, IRLZ44N, RFD7N10LE, RFD7N10LESM, RFD8P05, RFD8P05SM, RFD8P06E, RFD8P06ESM, RFD8P06LE, RFD8P06LESM

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.