All MOSFET. RE1C002ZP Datasheet

 

RE1C002ZP Datasheet and Replacement


   Type Designator: RE1C002ZP
   Marking Code: YK
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: EMT3F
 

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RE1C002ZP Datasheet (PDF)

 ..1. Size:481K  rohm
 re1c002zp.pdf pdf_icon

RE1C002ZP

RE1C002ZP Pch -20V -200mA Small Signal MOSFET DatasheetlOutlineVDSS-20V(3) EMT3FRDS(on) (Max.)1.2W(1) ID-200mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 ESD PROTECTION DIODE *2 BODY DIO

 7.1. Size:545K  rohm
 re1c002un.pdf pdf_icon

RE1C002ZP

RE1C002UN Nch 20V 200mA Small Signal MOSFET DatasheetlOutlineVDSS20VEMT3F (3) RDS(on) (Max.)1.2W(1) ID200mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIODE

 8.1. Size:590K  rohm
 re1c001un.pdf pdf_icon

RE1C002ZP

RE1C001UN Nch 20V 100mA Small Signal MOSFET Data SheetlOutlineVDSS20VEMT3F(3) RDS(on) (Max.)3.5WID (1) 100mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIODE

 8.2. Size:399K  rohm
 re1c001zp.pdf pdf_icon

RE1C002ZP

RE1C001ZP Pch -20V -100mA Small Signal MOSFET DatasheetlOutlineVDSS-20V(3) EMT3FRDS(on) (Max.)3.8W(1) ID-100mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIO

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Datasheet: RDX050N50FU6 , RDX060N60FU6 , RDX080N50FU6 , RDX100N60FU6 , RDX120N50FU6 , RE1C001UN , RE1C001ZP , RE1C002UN , IRFB4115 , RE1E002SP , RE1J002YN , RE1L002SN , RF1S25N06 , RF1S30N06LE , RF1S30P06 , RF1S40N10 , RF1S540 .

History: NCEP040N85MD | RU30P3B | SWD5N65K | SFP730 | NCEP12T18 | RU30P4B | SSM9971GJ

Keywords - RE1C002ZP MOSFET datasheet

 RE1C002ZP cross reference
 RE1C002ZP equivalent finder
 RE1C002ZP lookup
 RE1C002ZP substitution
 RE1C002ZP replacement

 

 
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