RE1C002ZP - параметры транзистора MOSFET, его аналоги, datasheet

RE1C002ZP Datasheet (PDF)

..1. Size:481K rohm
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RE1C002ZP Pch -20V -200mA Small Signal MOSFET DatasheetlOutlineVDSS-20V(3) EMT3FRDS(on) (Max.)1.2W(1) ID-200mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 ESD PROTECTION DIODE *2 BODY DIO

7.1. Size:545K rohm
re1c002un.pdf pdf_icon

RE1C002UN Nch 20V 200mA Small Signal MOSFET DatasheetlOutlineVDSS20VEMT3F (3) RDS(on) (Max.)1.2W(1) ID200mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIODE

8.1. Size:590K rohm
re1c001un.pdf pdf_icon

RE1C001UN Nch 20V 100mA Small Signal MOSFET Data SheetlOutlineVDSS20VEMT3F(3) RDS(on) (Max.)3.5WID (1) 100mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIODE

8.2. Size:399K rohm
re1c001zp.pdf pdf_icon

RE1C001ZP Pch -20V -100mA Small Signal MOSFET DatasheetlOutlineVDSS-20V(3) EMT3FRDS(on) (Max.)3.8W(1) ID-100mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIO

Другие MOSFET... RDX050N50FU6 , RDX060N60FU6 , RDX080N50FU6 , RDX100N60FU6 , RDX120N50FU6 , RE1C001UN , RE1C001ZP , RE1C002UN , IRFB4115 , RE1E002SP , RE1J002YN , RE1L002SN , RF1S25N06 , RF1S30N06LE , RF1S30P06 , RF1S40N10 , RF1S540 .