RE1E002SP PDF and Equivalents Search

 

RE1E002SP Specs and Replacement

Type Designator: RE1E002SP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: EMT3F

RE1E002SP substitution

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RE1E002SP datasheet

 ..1. Size:411K  rohm
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RE1E002SP

RE1E002SP Pch -30V -250mA Small Signal MOSFET Datasheet lOutline VDSS -30V EMT3F (3) RDS(on) (Max.) 1.4W (1) ID -250mA (2) PD 150mW lFeatures lInner circuit 1) Drive circuits can be simple. (1) Gate 2) Built-in G-S Protection Diode. (2) Source (3) Drain *1 BODY DIODE *2 ESD PROTECTION DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplica... See More ⇒

Detailed specifications: RDX060N60FU6, RDX080N50FU6, RDX100N60FU6, RDX120N50FU6, RE1C001UN, RE1C001ZP, RE1C002UN, RE1C002ZP, 8205A, RE1J002YN, RE1L002SN, RF1S25N06, RF1S30N06LE, RF1S30P06, RF1S40N10, RF1S540, RF1S60P03

Keywords - RE1E002SP MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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