All MOSFET. RE1E002SP Datasheet

 

RE1E002SP MOSFET. Datasheet pdf. Equivalent


   Type Designator: RE1E002SP
   Marking Code: WP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: EMT3F

 RE1E002SP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RE1E002SP Datasheet (PDF)

 ..1. Size:411K  rohm
 re1e002sp.pdf

RE1E002SP RE1E002SP

RE1E002SP Pch -30V -250mA Small Signal MOSFET DatasheetlOutlineVDSS-30VEMT3F(3) RDS(on) (Max.)1.4W(1) ID-250mA(2) PD150mWlFeatures lInner circuit1) Drive circuits can be simple.(1) Gate 2) Built-in G-S Protection Diode.(2) Source (3) Drain *1 BODY DIODE *2 ESD PROTECTION DIODE lPackaging specificationsPackaging TapingReel size (mm) 180lApplica

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: APT77N60JC3

 

 
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