All MOSFET. RE1E002SP Datasheet

 

RE1E002SP Datasheet and Replacement


   Type Designator: RE1E002SP
   Marking Code: WP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 0.25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: EMT3F
 

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RE1E002SP Datasheet (PDF)

 ..1. Size:411K  rohm
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RE1E002SP

RE1E002SP Pch -30V -250mA Small Signal MOSFET DatasheetlOutlineVDSS-30VEMT3F(3) RDS(on) (Max.)1.4W(1) ID-250mA(2) PD150mWlFeatures lInner circuit1) Drive circuits can be simple.(1) Gate 2) Built-in G-S Protection Diode.(2) Source (3) Drain *1 BODY DIODE *2 ESD PROTECTION DIODE lPackaging specificationsPackaging TapingReel size (mm) 180lApplica

Datasheet: RDX060N60FU6 , RDX080N50FU6 , RDX100N60FU6 , RDX120N50FU6 , RE1C001UN , RE1C001ZP , RE1C002UN , RE1C002ZP , 2SK3878 , RE1J002YN , RE1L002SN , RF1S25N06 , RF1S30N06LE , RF1S30P06 , RF1S40N10 , RF1S540 , RF1S60P03 .

History: STP3NB100

Keywords - RE1E002SP MOSFET datasheet

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