All MOSFET. RE1L002SN Datasheet

 

RE1L002SN Datasheet and Replacement


   Type Designator: RE1L002SN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 4.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: EMT3F
 

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RE1L002SN Datasheet (PDF)

 ..1. Size:638K  rohm
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RE1L002SN

RE1L002SN Nch 60V 250mA Small Signal MOSFET DatasheetlOutlineVDSS60V(3) EMT3FRDS(on) (Max.)2.4W(1) ID250mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(2.5V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 ESD PROTECTION DIODE *2 BODY DIODE

Datasheet: RDX100N60FU6 , RDX120N50FU6 , RE1C001UN , RE1C001ZP , RE1C002UN , RE1C002ZP , RE1E002SP , RE1J002YN , AON7408 , RF1S25N06 , RF1S30N06LE , RF1S30P06 , RF1S40N10 , RF1S540 , RF1S60P03 , RF1S640 , RF1S70N06 .

History: RU30P40M3

Keywords - RE1L002SN MOSFET datasheet

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