RE1L002SN PDF and Equivalents Search

 

RE1L002SN Specs and Replacement

Type Designator: RE1L002SN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 4.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: EMT3F

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RE1L002SN datasheet

 ..1. Size:638K  rohm
 re1l002sn.pdf pdf_icon

RE1L002SN

RE1L002SN Nch 60V 250mA Small Signal MOSFET Datasheet lOutline VDSS 60V (3) EMT3F RDS(on) (Max.) 2.4W (1) ID 250mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(2.5V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 ESD PROTECTION DIODE *2 BODY DIODE ... See More ⇒

Detailed specifications: RDX100N60FU6, RDX120N50FU6, RE1C001UN, RE1C001ZP, RE1C002UN, RE1C002ZP, RE1E002SP, RE1J002YN, IRFP250N, RF1S25N06, RF1S30N06LE, RF1S30P06, RF1S40N10, RF1S540, RF1S60P03, RF1S640, RF1S70N06

Keywords - RE1L002SN MOSFET specs

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