All MOSFET. RF4C050AP Datasheet

 

RF4C050AP Datasheet and Replacement


   Type Designator: RF4C050AP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: HUML2020L8
      - MOSFET Cross-Reference Search

 

RF4C050AP Datasheet (PDF)

 ..1. Size:2683K  rohm
 rf4c050ap.pdf pdf_icon

RF4C050AP

RF4C050APDatasheetPch -20V -10A Middle Power MOSFETlOutlinel HUML2020L8VDSS-20VRDS(on)(Max.) 26m ID 10A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package(HUML2020L8).3) Pb-free lead plating ; RoHS compliant.4)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HRLD150N10K | APT10021JFLL | SSW65R190S2 | SM4186T9RL | NCE30P12BS | WMM07N65C4 | NP180N04TUJ

Keywords - RF4C050AP MOSFET datasheet

 RF4C050AP cross reference
 RF4C050AP equivalent finder
 RF4C050AP lookup
 RF4C050AP substitution
 RF4C050AP replacement

 

 
Back to Top

 


 
.