RF4C050AP PDF and Equivalents Search

 

RF4C050AP Specs and Replacement

Type Designator: RF4C050AP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: HUML2020L8

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RF4C050AP datasheet

 ..1. Size:2683K  rohm
 rf4c050ap.pdf pdf_icon

RF4C050AP

RF4C050AP Datasheet Pch -20V -10A Middle Power MOSFET lOutline l HUML2020L8 VDSS -20V RDS(on)(Max.) 26m ID 10A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (HUML2020L8). 3) Pb-free lead plating ; RoHS compliant. 4)... See More ⇒

Detailed specifications: RF1S30N06LE, RF1S30P06, RF1S40N10, RF1S540, RF1S60P03, RF1S640, RF1S70N06, RF1S9540, AO3401, RF4C100BC, RF4E070BN, RF4E070GN, RF4E075AT, RF4E080BN, RF4E080GN, RF4E110BN, RF4E110GN

Keywords - RF4C050AP MOSFET specs

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