All MOSFET. RF4C050AP Datasheet

 

RF4C050AP Datasheet and Replacement


   Type Designator: RF4C050AP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: HUML2020L8
 

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RF4C050AP Datasheet (PDF)

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RF4C050AP

RF4C050APDatasheetPch -20V -10A Middle Power MOSFETlOutlinel HUML2020L8VDSS-20VRDS(on)(Max.) 26m ID 10A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package(HUML2020L8).3) Pb-free lead plating ; RoHS compliant.4)

Datasheet: RF1S30N06LE , RF1S30P06 , RF1S40N10 , RF1S540 , RF1S60P03 , RF1S640 , RF1S70N06 , RF1S9540 , AO3400 , RF4C100BC , RF4E070BN , RF4E070GN , RF4E075AT , RF4E080BN , RF4E080GN , RF4E110BN , RF4E110GN .

History: STI300N4F6 | SRT10N047HD56

Keywords - RF4C050AP MOSFET datasheet

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