All MOSFET. RF4C050AP Datasheet

 

RF4C050AP MOSFET. Datasheet pdf. Equivalent


   Type Designator: RF4C050AP
   Marking Code: SJ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: HUML2020L8

 RF4C050AP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RF4C050AP Datasheet (PDF)

 ..1. Size:2683K  rohm
 rf4c050ap.pdf

RF4C050AP RF4C050AP

RF4C050APDatasheetPch -20V -10A Middle Power MOSFETlOutlinel HUML2020L8VDSS-20VRDS(on)(Max.) 26m ID 10A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package(HUML2020L8).3) Pb-free lead plating ; RoHS compliant.4)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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