All MOSFET. RFD7N10LESM Datasheet

 

RFD7N10LESM Datasheet and Replacement


   Type Designator: RFD7N10LESM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO252AA
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RFD7N10LESM Datasheet (PDF)

 5.1. Size:136K  harris semi
 rfd7n10le-sm rfp7n10le.pdf pdf_icon

RFD7N10LESM

RFD7N10LE, RFD7N10LESMS E M I C O N D U C T O RRFP7N10LE7A, 100V, ESD Rated, Avalanche Rated, Logic LevelN-Channel Enhancement-Mode Power MOSFETs (MegaFETs)February 1994Features PackagingJEDEC TO-220AB 7A, 100VTOP VIEW rDS(ON) = 0.300SOURCE 2KV ESD ProtectedDRAINDRAIN(FLANGE) Temperature Compensating PSPICE Model GATE Can be Driven Directly fr

 5.2. Size:101K  intersil
 rfd7n10le-sm.pdf pdf_icon

RFD7N10LESM

RFD7N10LE, RFD7N10LESMData Sheet October 1999 File Number 3598.37A, 100V, 0.300 Ohm, N-Channel, Logic FeaturesLevel, Power MOSFETs 7A, 100VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.300a modern process. This process, which uses feature sizes Temperature Compensating PSPICE Modelapproaching those of LSI integrated circuits gives optimumutil

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMM11N80M3 | FDMS9620S | AM2314NE | RFP2N10L | IRFI7536G

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