RFD7N10LESM MOSFET Datasheet: N-Ch, 100V, 7A. Full specification with pinout and replacement list

RFD7N10LESM Specs and Replacement

   Type Designator: RFD7N10LESM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO252AA

RFD7N10LESM substitution

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RFD7N10LESM datasheet

5.1. Size:136K harris semi
rfd7n10le-sm rfp7n10le.pdf pdf_icon

RFD7N10LE, RFD7N10LESM S E M I C O N D U C T O R RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) February 1994 Features Packaging JEDEC TO-220AB 7A, 100V TOP VIEW rDS(ON) = 0.300 SOURCE 2KV ESD Protected DRAIN DRAIN (FLANGE) Temperature Compensating PSPICE Model GATE Can be Driven Directly fr... See More ⇒

5.2. Size:101K intersil
rfd7n10le-sm.pdf pdf_icon

RFD7N10LE, RFD7N10LESM Data Sheet October 1999 File Number 3598.3 7A, 100V, 0.300 Ohm, N-Channel, Logic Features Level, Power MOSFETs 7A, 100V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.300 a modern process. This process, which uses feature sizes Temperature Compensating PSPICE Model approaching those of LSI integrated circuits gives optimum util... See More ⇒

Detailed specifications: RFD3055LE , RFD3055LESM , RFD3055SM , RFD3N08L , RFD3N08LSM , RFD4N06L , RFD4N06LSM , RFD7N10LE , IRF640N , RFD8P05 , RFD8P05SM , RFD8P06E , RFD8P06ESM , RFD8P06LE , RFD8P06LESM , RFF60P06 , RFF70N06 .