All MOSFET. RFD7N10LESM Datasheet

 

RFD7N10LESM MOSFET. Datasheet pdf. Equivalent


   Type Designator: RFD7N10LESM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 125 nC
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO252AA

 RFD7N10LESM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFD7N10LESM Datasheet (PDF)

 5.1. Size:136K  harris semi
 rfd7n10le-sm rfp7n10le.pdf

RFD7N10LESM RFD7N10LESM

RFD7N10LE, RFD7N10LESMS E M I C O N D U C T O RRFP7N10LE7A, 100V, ESD Rated, Avalanche Rated, Logic LevelN-Channel Enhancement-Mode Power MOSFETs (MegaFETs)February 1994Features PackagingJEDEC TO-220AB 7A, 100VTOP VIEW rDS(ON) = 0.300SOURCE 2KV ESD ProtectedDRAINDRAIN(FLANGE) Temperature Compensating PSPICE Model GATE Can be Driven Directly fr

 5.2. Size:101K  intersil
 rfd7n10le-sm.pdf

RFD7N10LESM RFD7N10LESM

RFD7N10LE, RFD7N10LESMData Sheet October 1999 File Number 3598.37A, 100V, 0.300 Ohm, N-Channel, Logic FeaturesLevel, Power MOSFETs 7A, 100VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.300a modern process. This process, which uses feature sizes Temperature Compensating PSPICE Modelapproaching those of LSI integrated circuits gives optimumutil

Datasheet: RFD3055LE , RFD3055LESM , RFD3055SM , RFD3N08L , RFD3N08LSM , RFD4N06L , RFD4N06LSM , RFD7N10LE , 10N60 , RFD8P05 , RFD8P05SM , RFD8P06E , RFD8P06ESM , RFD8P06LE , RFD8P06LESM , RFF60P06 , RFF70N06 .

History: HUF75842P3

 

 
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