RF4E110BN MOSFET Datasheet: N-Ch, 30V, 11A. Full specification with pinout and replacement list

RF4E110BN Specs and Replacement

Type Designator: RF4E110BN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0111 Ohm

Package: HUML2020L8

RF4E110BN substitution

- MOSFET ⓘ Cross-Reference Search

RF4E110BN datasheet

..1. Size:428K rohm
rf4e110bn.pdf pdf_icon

RF4E110BN Nch 30V 11A Power MOSFET Datasheet lOutline (6) VDSS 30V (5) HUML2020L8 (4) RDS(on) at 10V (Max.) 11.1mW (4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 15.4mW (3) (7) ID 11A (3) (2) PD 2.0W (1) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8). (2) Drain (6) Drain (3) Gate (7)... See More ⇒

7.1. Size:441K rohm
rf4e110gn.pdf pdf_icon

RF4E110GN Nch 30V 11A Power MOSFET Datasheet lOutline (6) VDSS (5) 30V HUML2020L8 (4) RDS(on) at 10V (Max.) 11.3mW (4) (1) (5) (8) (2) (6) RDS(on) at 4.5V (Max.) 15.3mW (3) (7) ID 11A (3) (2) PD (1) 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8). (2) Drain (6) Drain (3) Gate... See More ⇒

Detailed specifications: RF1S9540, RF4C050AP, RF4C100BC, RF4E070BN, RF4E070GN, RF4E075AT, RF4E080BN, RF4E080GN, 13N50, RF4E110GN, RF6E045AJ, SIS322DNT, SIS330DN, SIS332DN, SIS334DN, SIS376DN, SIS402DN