All MOSFET. RF6E045AJ Datasheet

 

RF6E045AJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: RF6E045AJ
   Marking Code: CJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.1 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0237 Ohm
   Package: TUMT6

 RF6E045AJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RF6E045AJ Datasheet (PDF)

 ..1. Size:2864K  rohm
 rf6e045aj.pdf

RF6E045AJ RF6E045AJ

RF6E045AJDatasheetNch 30V 4.5A Middle Power MOSFETlOutlinel TUMT6VDSS30VRDS(on)(Max.) 23.7mID 4.5APD1W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (TUMT6).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackaging sp

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: VS3817GPMT | IRFW634A | IRF640NS | STP32N55M5 | ZXMP6A13G | TMPF16N60 | 2SJ449

 

 
Back to Top