RF6E045AJ Specs and Replacement
Type Designator: RF6E045AJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0237 Ohm
Package: TUMT6
RF6E045AJ substitution
- MOSFET ⓘ Cross-Reference Search
RF6E045AJ datasheet
rf6e045aj.pdf
RF6E045AJ Datasheet Nch 30V 4.5A Middle Power MOSFET lOutline l TUMT6 VDSS 30V RDS(on)(Max.) 23.7m ID 4.5A PD 1W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (TUMT6). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackaging sp... See More ⇒
Detailed specifications: RF4C100BC, RF4E070BN, RF4E070GN, RF4E075AT, RF4E080BN, RF4E080GN, RF4E110BN, RF4E110GN, 12N60, SIS322DNT, SIS330DN, SIS332DN, SIS334DN, SIS376DN, SIS402DN, SIS406DN, SIS407ADN
Keywords - RF6E045AJ MOSFET specs
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