RF6E045AJ Datasheet and Replacement
Type Designator: RF6E045AJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0237 Ohm
Package: TUMT6
RF6E045AJ substitution
RF6E045AJ Datasheet (PDF)
rf6e045aj.pdf
RF6E045AJDatasheetNch 30V 4.5A Middle Power MOSFETlOutlinel TUMT6VDSS30VRDS(on)(Max.) 23.7mID 4.5APD1W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (TUMT6).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackaging sp
Datasheet: RF4C100BC , RF4E070BN , RF4E070GN , RF4E075AT , RF4E080BN , RF4E080GN , RF4E110BN , RF4E110GN , 4N60 , SIS322DNT , SIS330DN , SIS332DN , SIS334DN , SIS376DN , SIS402DN , SIS406DN , SIS407ADN .
History: STI24N60M2 | SSH5N90A | SSM9915GJ | MTB09N03V8 | KMB060N60FA | STB55NF06 | STB70NF03L-1
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History: STI24N60M2 | SSH5N90A | SSM9915GJ | MTB09N03V8 | KMB060N60FA | STB55NF06 | STB70NF03L-1
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