SIS322DNT PDF and Equivalents Search

 

SIS322DNT Specs and Replacement

Type Designator: SIS322DNT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 15.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 287 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: 1212-8

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SIS322DNT datasheet

 ..1. Size:129K  vishay
 sis322dnt.pdf pdf_icon

SIS322DNT

New Product SiS322DNT Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested 0.0075 at VGS = 10 V 38.3 Thin 0.75 mm height 30 6.9 nC 0.0120 at VGS = 4.5 V 30.2 Material categorization For definitions of compliance please see Thin PowerPAK ... See More ⇒

Detailed specifications: RF4E070BN, RF4E070GN, RF4E075AT, RF4E080BN, RF4E080GN, RF4E110BN, RF4E110GN, RF6E045AJ, 5N65, SIS330DN, SIS332DN, SIS334DN, SIS376DN, SIS402DN, SIS406DN, SIS407ADN, SIS407DN

Keywords - SIS322DNT MOSFET specs

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