All MOSFET. SIS322DNT Datasheet

 

SIS322DNT Datasheet and Replacement


   Type Designator: SIS322DNT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 15.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14.3 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 287 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: 1212-8
 
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SIS322DNT Datasheet (PDF)

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SIS322DNT

New ProductSiS322DNTVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested0.0075 at VGS = 10 V 38.3 Thin 0.75 mm height30 6.9 nC0.0120 at VGS = 4.5 V 30.2 Material categorization:For definitions of compliance please see Thin PowerPAK

Datasheet: RF4E070BN , RF4E070GN , RF4E075AT , RF4E080BN , RF4E080GN , RF4E110BN , RF4E110GN , RF6E045AJ , 4435 , SIS330DN , SIS332DN , SIS334DN , SIS376DN , SIS402DN , SIS406DN , SIS407ADN , SIS407DN .

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