All MOSFET. SIS332DN Datasheet

 

SIS332DN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIS332DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 15.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
   Package: 1212-8

 SIS332DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIS332DN Datasheet (PDF)

 ..1. Size:575K  vishay
 sis332dn.pdf

SIS332DN SIS332DN

New ProductSiS332DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)f Qg (Typ.)Definition0.0084 at VGS = 10 V 35g TrenchFET Power MOSFET30 8.1 nC0.0110 at VGS = 4.5 V 35g PWM Optimized 100 % Rg Tested 100 % UIS TestedPowerPAK 1212-8 Compliant to

 9.1. Size:562K  vishay
 sis334dn.pdf

SIS332DN SIS332DN

SiS334DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.)Definition0.0113 at VGS = 10 V 20 TrenchFET Power MOSFET30 5.1 nC 100 % Rg and UIS Tested0.0146 at VGS = 4.5 V 20 Compliant to RoHS Directive 2002/95/ECPowerPAK 1212-8APPLICATIONS Not

 9.2. Size:575K  vishay
 sis330dn.pdf

SIS332DN SIS332DN

New ProductSiS330DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)f Qg (Typ.)Definition0.0056 at VGS = 10 V 35g TrenchFET Power MOSFET30 11.2 nC0.0075 at VGS = 4.5 V 35g PWM Optimized 100 % Rg Tested 100 % UIS TestedPowerPAK 1212-8 Compliant t

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History: DMC1029UFDB | MEE42942-G

 

 
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