SIS332DN - параметры транзистора MOSFET, его аналоги, datasheet

SIS332DN Datasheet (PDF)

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New ProductSiS332DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)f Qg (Typ.)Definition0.0084 at VGS = 10 V 35g TrenchFET Power MOSFET30 8.1 nC0.0110 at VGS = 4.5 V 35g PWM Optimized 100 % Rg Tested 100 % UIS TestedPowerPAK 1212-8 Compliant to

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SiS334DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.)Definition0.0113 at VGS = 10 V 20 TrenchFET Power MOSFET30 5.1 nC 100 % Rg and UIS Tested0.0146 at VGS = 4.5 V 20 Compliant to RoHS Directive 2002/95/ECPowerPAK 1212-8APPLICATIONS Not

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New ProductSiS330DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)f Qg (Typ.)Definition0.0056 at VGS = 10 V 35g TrenchFET Power MOSFET30 11.2 nC0.0075 at VGS = 4.5 V 35g PWM Optimized 100 % Rg Tested 100 % UIS TestedPowerPAK 1212-8 Compliant t

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