SIS402DN PDF and Equivalents Search

 

SIS402DN Specs and Replacement

Type Designator: SIS402DN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: 1212-8

SIS402DN substitution

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SIS402DN datasheet

 ..1. Size:549K  vishay
 sis402dn.pdf pdf_icon

SIS402DN

SiS402DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.006 at VGS = 10 V 35 TrenchFET Power MOSFET 30 12 nC 0.008 at VGS = 4.5 V 35 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATION... See More ⇒

 9.1. Size:532K  vishay
 sis406dn.pdf pdf_icon

SIS402DN

New Product SiS406DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.011 at VGS = 10 V 14 30 PWM Optimized RoHS 0.0145 at VGS = 4.5 V 12.2 COMPLIANT New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % Rg Tested 100 % UIS Tested AP... See More ⇒

 9.2. Size:621K  vishay
 sis407adn.pdf pdf_icon

SIS402DN

SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) f, g Qg (TYP.) Low thermal resistance PowerPAK package 0.009 at VGS = -4.5 V -18 100 % Rg and UIS tested -20 0.0122 at VGS = -2.5 V -18 63 nC Material categorization 0.0190 at VGS = -1.8 V -18 For definitions o... See More ⇒

 9.3. Size:531K  vishay
 sis407dn.pdf pdf_icon

SIS402DN

New Product SiS407DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)e, f Qg (Typ.) Definition 0.0095 at VGS = - 4.5 V - 25 TrenchFET Power MOSFET - 20 0.0138 at VGS = - 2.5 V - 25 38 nC Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm 0.0195 at VGS ... See More ⇒

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Detailed specifications: RF4E110BN, RF4E110GN, RF6E045AJ, SIS322DNT, SIS330DN, SIS332DN, SIS334DN, SIS376DN, CS150N03A8, SIS406DN, SIS407ADN, SIS407DN, SIS410DN, SIS412DN, SIS413DN, SIS414DN, SIS424DN

Keywords - SIS402DN MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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