SIS468DN Datasheet. Specs and Replacement
Type Designator: SIS468DN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
Package: 1212-8
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SIS468DN datasheet
sis468dn.pdf
SiS468DN Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested 0.0195 at VGS = 10 V 30g Capable of Operating with 5 V Gate Drive 80 0.0210 at VGS = 7.5 V 30g 8.7 nC Material categorization For definitions of compliance please see 0.0320 at VGS = 4.5 V ... See More ⇒
Detailed specifications: SIS438DN, SIS439DNT, SIS443DN, SIS444DN, SIS447DN, SIS452DN, SIS454DN, SIS456DN, 8N60, SIS472ADN, SIS472DN, SIS476DN, SIS478DN, SIS496EDNT, SIS612EDNT, SIS698DN, SIS778DN
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