All MOSFET. SIS468DN Datasheet

 

SIS468DN Datasheet and Replacement


   Type Designator: SIS468DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: 1212-8
 

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SIS468DN Datasheet (PDF)

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SIS468DN

SiS468DNVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested0.0195 at VGS = 10 V 30g Capable of Operating with 5 V Gate Drive80 0.0210 at VGS = 7.5 V 30g 8.7 nC Material categorization:For definitions of compliance please see0.0320 at VGS = 4.5 V

Datasheet: SIS438DN , SIS439DNT , SIS443DN , SIS444DN , SIS447DN , SIS452DN , SIS454DN , SIS456DN , K2611 , SIS472ADN , SIS472DN , SIS476DN , SIS478DN , SIS496EDNT , SIS612EDNT , SIS698DN , SIS778DN .

History: MTB1D7N03ATH8 | IRFB4127PBF | STB25NM60ND | IPI70N10S3-12 | RD06HHF1 | RD3U040CN | IRLZ44PBF

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