SIS612EDNT Datasheet. Specs and Replacement
Type Designator: SIS612EDNT 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 24.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 558 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: 1212-8
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SIS612EDNT substitution
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SIS612EDNT datasheet
sis612ednt.pdf
SiS612EDNT www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)f, g Qg (Typ.) 100 % Rg and UIS Tested 0.0039 at VGS = 4.5 V 50 Low Thermal Resistance PowerPAK Package 20 0.0042 at VGS = 3.7 V 50 22.5 nC with Small Size and 0.75 mm Profile 0.0058 at VGS = 2.5 V 50 Typical ESD... See More ⇒
Detailed specifications: SIS454DN, SIS456DN, SIS468DN, SIS472ADN, SIS472DN, SIS476DN, SIS478DN, SIS496EDNT, IRF1405, SIS698DN, SIS778DN, SIS780DN, SIS782DN, SIS822DNT, SIS862DN, SIS888DN, SIS890DN
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