All MOSFET. SIS612EDNT Datasheet

 

SIS612EDNT Datasheet and Replacement


   Type Designator: SIS612EDNT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 24.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 558 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: 1212-8
 

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SIS612EDNT Datasheet (PDF)

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SIS612EDNT

SiS612EDNTwww.vishay.comVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)f, g Qg (Typ.) 100 % Rg and UIS Tested0.0039 at VGS = 4.5 V 50 Low Thermal Resistance PowerPAK Package 20 0.0042 at VGS = 3.7 V 50 22.5 nCwith Small Size and 0.75 mm Profile0.0058 at VGS = 2.5 V 50 Typical ESD

Datasheet: SIS454DN , SIS456DN , SIS468DN , SIS472ADN , SIS472DN , SIS476DN , SIS478DN , SIS496EDNT , NCEP15T14 , SIS698DN , SIS778DN , SIS780DN , SIS782DN , SIS822DNT , SIS862DN , SIS888DN , SIS890DN .

History: SWHA7N65D | KMB6D6N30Q | NP16N06YLL | SI5435BDC | IPI65R380C6 | SSF7NS70UGX | STB21NM50N

Keywords - SIS612EDNT MOSFET datasheet

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