All MOSFET. SIS698DN Datasheet

 

SIS698DN Datasheet and Replacement


   Type Designator: SIS698DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm
   Package: 1212-8
 

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SIS698DN Datasheet (PDF)

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SIS698DN

SiS698DNVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.)Definition0.195 at VGS = 10 V 6.9 TrenchFET Power MOSFET100 5.2 nC0.230 at VGS = 6 V 6.4 100 % Rg and UIS Tested Low Qg for High EfficiencyPowerPAK 1212-8 Compliant to RoHS Directive 200

Datasheet: SIS456DN , SIS468DN , SIS472ADN , SIS472DN , SIS476DN , SIS478DN , SIS496EDNT , SIS612EDNT , MMIS60R580P , SIS778DN , SIS780DN , SIS782DN , SIS822DNT , SIS862DN , SIS888DN , SIS890DN , SIS892ADN .

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