SIS698DN Datasheet. Specs and Replacement
Type Designator: SIS698DN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 35 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm
Package: 1212-8
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SIS698DN datasheet
sis698dn.pdf
SiS698DN Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Definition 0.195 at VGS = 10 V 6.9 TrenchFET Power MOSFET 100 5.2 nC 0.230 at VGS = 6 V 6.4 100 % Rg and UIS Tested Low Qg for High Efficiency PowerPAK 1212-8 Compliant to RoHS Directive 200... See More ⇒
Detailed specifications: SIS456DN, SIS468DN, SIS472ADN, SIS472DN, SIS476DN, SIS478DN, SIS496EDNT, SIS612EDNT, 7N60, SIS778DN, SIS780DN, SIS782DN, SIS822DNT, SIS862DN, SIS888DN, SIS890DN, SIS892ADN
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