SIS780DN Datasheet. Specs and Replacement
Type Designator: SIS780DN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 194 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: 1212-8
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SIS780DN substitution
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SIS780DN datasheet
sis780dn.pdf
New Product SiS780DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) Definition SkyFET Monolithic TrenchFET Gen III 0.0135 at VGS = 10 V 18a 30 7.3 nC Power MOSFET and Schottky Diode 0.0175 at VGS = 4.5 V 18a 100 % Rg and UIS Tested ... See More ⇒
sis782dn.pdf
SiS782DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)e Qg (Typ.) SkyFET Monolithic TrenchFET Power MOSFET 0.0095 at VGS = 10 V 16 30 9.5 nC and Schottky Diode 0.0120 at VGS = 4.5 V 16 Low Thermal Resistance PowerPAK Package with Sm... See More ⇒
Detailed specifications: SIS472ADN, SIS472DN, SIS476DN, SIS478DN, SIS496EDNT, SIS612EDNT, SIS698DN, SIS778DN, IRFZ46N, SIS782DN, SIS822DNT, SIS862DN, SIS888DN, SIS890DN, SIS892ADN, SIS892DN, SIS902DN
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