All MOSFET. SIS780DN Datasheet

 

SIS780DN Datasheet and Replacement


   Type Designator: SIS780DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 194 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: 1212-8
 

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SIS780DN Datasheet (PDF)

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SIS780DN

New ProductSiS780DNVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition SkyFET Monolithic TrenchFET Gen III 0.0135 at VGS = 10 V 18a30 7.3 nCPower MOSFET and Schottky Diode0.0175 at VGS = 4.5 V 18a 100 % Rg and UIS Tested

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SIS780DN

SiS782DNVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)e Qg (Typ.) SkyFET Monolithic TrenchFET Power MOSFET0.0095 at VGS = 10 V 1630 9.5 nCand Schottky Diode0.0120 at VGS = 4.5 V 16 Low Thermal Resistance PowerPAK Packagewith Sm

Datasheet: SIS472ADN , SIS472DN , SIS476DN , SIS478DN , SIS496EDNT , SIS612EDNT , SIS698DN , SIS778DN , STP65NF06 , SIS782DN , SIS822DNT , SIS862DN , SIS888DN , SIS890DN , SIS892ADN , SIS892DN , SIS902DN .

History: SI6993DQ | STK0260D | IRLU3714ZPBF | SFP026N100C3 | SIRA10BDP | SI7302DN | IRLU8743

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