All MOSFET. SIS822DNT Datasheet

 

SIS822DNT Datasheet and Replacement


   Type Designator: SIS822DNT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: 1212-8
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SIS822DNT Datasheet (PDF)

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SIS822DNT

SiS822DNTwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested0.024 at VGS = 10 V 1230 3.8 nC Thin 0.8 mm profile0.030 at VGS = 4.5 V 12 Material categorization:Thin PowerPAK 1212-8 SingleFor definitions of compliance please seeD

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