SIS822DNT Datasheet. Specs and Replacement
Type Designator: SIS822DNT 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: 1212-8
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SIS822DNT substitution
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SIS822DNT datasheet
sis822dnt.pdf
SiS822DNT www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested 0.024 at VGS = 10 V 12 30 3.8 nC Thin 0.8 mm profile 0.030 at VGS = 4.5 V 12 Material categorization Thin PowerPAK 1212-8 Single For definitions of compliance please see D ... See More ⇒
Detailed specifications: SIS476DN, SIS478DN, SIS496EDNT, SIS612EDNT, SIS698DN, SIS778DN, SIS780DN, SIS782DN, IRLB3034, SIS862DN, SIS888DN, SIS890DN, SIS892ADN, SIS892DN, SIS902DN, SIS990DN, SISA04DN
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