All MOSFET. SIS862DN Datasheet

 

SIS862DN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIS862DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
   |Id|ⓘ - Maximum Drain Current: 15.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20.8 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 545 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: 1212-8

 SIS862DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIS862DN Datasheet (PDF)

 ..1. Size:553K  vishay
 sis862dn.pdf

SIS862DN SIS862DN

SiS862DNVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested0.0085 at VGS = 10 V 40g Capable of Operating with 5 V Gate Drive60 0.0105 at VGS = 6.0 V 40g 8.7 nC Material categorization:For definitions of compliance please see0.0125 at VGS = 4.5 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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