All MOSFET. SIS862DN Datasheet

 

SIS862DN Datasheet and Replacement


   Type Designator: SIS862DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 545 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: 1212-8
 

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SIS862DN Datasheet (PDF)

 ..1. Size:553K  vishay
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SIS862DN

SiS862DNVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested0.0085 at VGS = 10 V 40g Capable of Operating with 5 V Gate Drive60 0.0105 at VGS = 6.0 V 40g 8.7 nC Material categorization:For definitions of compliance please see0.0125 at VGS = 4.5 V

Datasheet: SIS478DN , SIS496EDNT , SIS612EDNT , SIS698DN , SIS778DN , SIS780DN , SIS782DN , SIS822DNT , AON7403 , SIS888DN , SIS890DN , SIS892ADN , SIS892DN , SIS902DN , SIS990DN , SISA04DN , SISA10DN .

History: IRFB830 | IPN70R2K0P7S | HSBA3094 | IXTP5N60P

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