SIS888DN Datasheet. Specs and Replacement
Type Designator: SIS888DN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: 1212-8S
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SIS888DN substitution
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SIS888DN datasheet
sis888dn.pdf
SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET technology optimizes balance of VDS (V) RDS(on) ( ) (MAX.) ID (A)f Qg (TYP.) RDS(on), Qg, Qsw and Qoss 0.058 at VGS = 10 V 20.2 100 % Rg and UIS tested 150 7.6 nC 0.085 at VGS = 7.5 V 16.6 Material categorization For definitions of compliance please see Power... See More ⇒
Detailed specifications: SIS496EDNT, SIS612EDNT, SIS698DN, SIS778DN, SIS780DN, SIS782DN, SIS822DNT, SIS862DN, IRFB7545, SIS890DN, SIS892ADN, SIS892DN, SIS902DN, SIS990DN, SISA04DN, SISA10DN, SISA12ADN
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