All MOSFET. SIS888DN Datasheet

 

SIS888DN Datasheet and Replacement


   Type Designator: SIS888DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: 1212-8S
 

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SIS888DN Datasheet (PDF)

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SIS888DN

SiS888DNwww.vishay.comVishay SiliconixN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET technology optimizes balance ofVDS (V) RDS(on) () (MAX.) ID (A)f Qg (TYP.)RDS(on), Qg, Qsw and Qoss0.058 at VGS = 10 V 20.2 100 % Rg and UIS tested150 7.6 nC0.085 at VGS = 7.5 V 16.6 Material categorization:For definitions of compliance please seePower

Datasheet: SIS496EDNT , SIS612EDNT , SIS698DN , SIS778DN , SIS780DN , SIS782DN , SIS822DNT , SIS862DN , 8N60 , SIS890DN , SIS892ADN , SIS892DN , SIS902DN , SIS990DN , SISA04DN , SISA10DN , SISA12ADN .

History: SI7160DP | SRT03N011L | SSP60R190SFD2 | SI7100DN | SI7380ADP | IRL60B216 | IPN60R360P7S

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