SIS902DN Datasheet. Specs and Replacement
Type Designator: SIS902DN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.186 Ohm
Package: 1212-8
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SIS902DN substitution
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SIS902DN datasheet
sis902dn.pdf
SiS902DN Vishay Siliconix Dual N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.186 at VGS = 10 V 4e TrenchFET Power MOSFET 75 2.1 nC 0.228 at VGS = 4.5 V 4e Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm Profile 100 % Rg Tested ... See More ⇒
Detailed specifications: SIS780DN, SIS782DN, SIS822DNT, SIS862DN, SIS888DN, SIS890DN, SIS892ADN, SIS892DN, RU7088R, SIS990DN, SISA04DN, SISA10DN, SISA12ADN, SISA12DN, SISA14DN, SISA18ADN, SISA18DN
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