SIS990DN Datasheet. Specs and Replacement
Type Designator: SIS990DN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 73 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: 1212-8
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SIS990DN datasheet
sis990dn.pdf
SiS990DN Vishay Siliconix Dual N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.085 at VGS = 10 V 12.1 For definitions of compliance please see 100 0.090 at VGS = 7.5 V 11.8 3.3 nC www.vishay.com/doc?99912 0.105 at VGS = 6 V 10.9 APPLICATI... See More ⇒
Detailed specifications: SIS782DN, SIS822DNT, SIS862DN, SIS888DN, SIS890DN, SIS892ADN, SIS892DN, SIS902DN, MMIS60R580P, SISA04DN, SISA10DN, SISA12ADN, SISA12DN, SISA14DN, SISA18ADN, SISA18DN, SISS23DN
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