All MOSFET. SIS990DN Datasheet

 

SIS990DN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIS990DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.2 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 73 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: 1212-8

 SIS990DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIS990DN Datasheet (PDF)

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 sis990dn.pdf

SIS990DN SIS990DN

SiS990DNVishay SiliconixDual N-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.085 at VGS = 10 V 12.1For definitions of compliance please see100 0.090 at VGS = 7.5 V 11.8 3.3 nCwww.vishay.com/doc?999120.105 at VGS = 6 V 10.9APPLICATI

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