All MOSFET. SIS990DN Datasheet

 

SIS990DN Datasheet and Replacement


   Type Designator: SIS990DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 73 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: 1212-8
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SIS990DN Datasheet (PDF)

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SIS990DN

SiS990DNVishay SiliconixDual N-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.085 at VGS = 10 V 12.1For definitions of compliance please see100 0.090 at VGS = 7.5 V 11.8 3.3 nCwww.vishay.com/doc?999120.105 at VGS = 6 V 10.9APPLICATI

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SM6A12NSFP | FCPF7N60YDTU

Keywords - SIS990DN MOSFET datasheet

 SIS990DN cross reference
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