All MOSFET. SISA04DN Datasheet

 

SISA04DN Datasheet and Replacement


   Type Designator: SISA04DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 1040 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00215 Ohm
   Package: 1212-8
 

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SISA04DN Datasheet (PDF)

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SISA04DN

New ProductSiSA04DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.)Definition0.00215 at VGS = 10 V 40g TrenchFET Gen IV Power MOSFET30 22.5 nC0.0031 at VGS = 4.5 V 40g 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK 12

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SISA04DN

SiSA01DNwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPowerPAK 1212-8 SingleD TrenchFET Gen IV p-channel power MOSFETD8D Provides exceptionally low RDS(ON) in a compact 7D6package that is thermally enhanced5 Enables higher power density 100 % Rg and UIS tested Material categorization: for definitions of compliance 11

Datasheet: SIS822DNT , SIS862DN , SIS888DN , SIS890DN , SIS892ADN , SIS892DN , SIS902DN , SIS990DN , HY1906P , SISA10DN , SISA12ADN , SISA12DN , SISA14DN , SISA18ADN , SISA18DN , SISS23DN , SISS40DN .

History: 2N6770JANTXV

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