SISA04DN Datasheet. Specs and Replacement
Type Designator: SISA04DN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 1040 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00215 Ohm
Package: 1212-8
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SISA04DN datasheet
sisa04dn.pdf
New Product SiSA04DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) Definition 0.00215 at VGS = 10 V 40g TrenchFET Gen IV Power MOSFET 30 22.5 nC 0.0031 at VGS = 4.5 V 40g 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 12... See More ⇒
sisa01dn.pdf
SiSA01DN www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK 1212-8 Single D TrenchFET Gen IV p-channel power MOSFET D 8 D Provides exceptionally low RDS(ON) in a compact 7 D 6 package that is thermally enhanced 5 Enables higher power density 100 % Rg and UIS tested Material categorization for definitions of compliance 1 1 ... See More ⇒
Detailed specifications: SIS822DNT, SIS862DN, SIS888DN, SIS890DN, SIS892ADN, SIS892DN, SIS902DN, SIS990DN, AOD4184A, SISA10DN, SISA12ADN, SISA12DN, SISA14DN, SISA18ADN, SISA18DN, SISS23DN, SISS40DN
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