All MOSFET. SISS23DN Datasheet

 

SISS23DN MOSFET. Datasheet pdf. Equivalent

Type Designator: SISS23DN

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 4.8 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 0.9 V

Maximum Drain Current |Id|: 27 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 195 nC

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 835 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm

Package: 1212-8S

SISS23DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SISS23DN Datasheet (PDF)

1.1. siss23dn.pdf Size:261K _update-mosfet

SISS23DN
SISS23DN

SiSS23DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) • Low Thermal Resistance PowerPAK® Package with Small Size and Low 0.75 mm 0.0045 at VGS = - 4.5 V - 50e Profile - 20 0.0063 at VGS = - 2.5 V - 50e 93 nC • 100 % Rg and UIS Tested 0.0115 at VGS = - 1.8 V - 50e • Materia

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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