SISS40DN Datasheet and Replacement
Type Designator: SISS40DN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: 1212-8S
SISS40DN substitution
SISS40DN Datasheet (PDF)
siss40dn.pdf

SiSS40DNVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET Technology Optimizes BalanceVDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.)of RDS(on), Qg, Qsw and Qoss0.0210 at VGS = 10 V 36.5 100 % Rg and UIS Tested Material categorization:100 0.0230 at VGS = 7.5 V 35 10 nCFor definitions of compliance please see0.0260 at VGS = 6 V 3
Datasheet: SISA04DN , SISA10DN , SISA12ADN , SISA12DN , SISA14DN , SISA18ADN , SISA18DN , SISS23DN , IRF740 , SIX3439K , SIZ300DT , SIZ340DT , SIZ342DT , SIZ702DT , SIZ704DT , SIZ710DT , 2SK1871 .
History: STW14NK60Z
Keywords - SISS40DN MOSFET datasheet
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SISS40DN substitution
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History: STW14NK60Z



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