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SISS40DN PDF Specs and Replacement


   Type Designator: SISS40DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: 1212-8S
 

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SISS40DN PDF Specs

 ..1. Size:210K  vishay
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SISS40DN

SiSS40DN Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET Technology Optimizes Balance VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) of RDS(on), Qg, Qsw and Qoss 0.0210 at VGS = 10 V 36.5 100 % Rg and UIS Tested Material categorization 100 0.0230 at VGS = 7.5 V 35 10 nC For definitions of compliance please see 0.0260 at VGS = 6 V 3... See More ⇒

Detailed specifications: SISA04DN , SISA10DN , SISA12ADN , SISA12DN , SISA14DN , SISA18ADN , SISA18DN , SISS23DN , IRF740 , SIX3439K , SIZ300DT , SIZ340DT , SIZ342DT , SIZ702DT , SIZ704DT , SIZ710DT , 2SK1871 .

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