All MOSFET. SISS40DN Datasheet

 

SISS40DN MOSFET. Datasheet pdf. Equivalent

Type Designator: SISS40DN

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3.7 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 9.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16 nC

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 220 pF

Maximum Drain-Source On-State Resistance (Rds): 0.021 Ohm

Package: 1212-8S

SISS40DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SISS40DN Datasheet (PDF)

1.1. siss40dn.pdf Size:210K _update-mosfet

SISS40DN
SISS40DN

SiSS40DN Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • ThunderFET® Technology Optimizes Balance VDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.) of RDS(on), Qg, Qsw and Qoss 0.0210 at VGS = 10 V 36.5 • 100 % Rg and UIS Tested • Material categorization: 100 0.0230 at VGS = 7.5 V 35 10 nC For definitions of compliance please see 0.0260 at VGS = 6 V 3

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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