SISS40DN Datasheet. Specs and Replacement

Type Designator: SISS40DN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: 1212-8S

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SISS40DN datasheet

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SISS40DN

SiSS40DN Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET Technology Optimizes Balance VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) of RDS(on), Qg, Qsw and Qoss 0.0210 at VGS = 10 V 36.5 100 % Rg and UIS Tested Material categorization 100 0.0230 at VGS = 7.5 V 35 10 nC For definitions of compliance please see 0.0260 at VGS = 6 V 3... See More ⇒

Detailed specifications: SISA04DN, SISA10DN, SISA12ADN, SISA12DN, SISA14DN, SISA18ADN, SISA18DN, SISS23DN, IRF740, SIX3439K, SIZ300DT, SIZ340DT, SIZ342DT, SIZ702DT, SIZ704DT, SIZ710DT, 2SK1871

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