SISS40DN PDF Specs and Replacement
Type Designator: SISS40DN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: 1212-8S
SISS40DN substitution
SISS40DN PDF Specs
siss40dn.pdf
SiSS40DN Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET Technology Optimizes Balance VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) of RDS(on), Qg, Qsw and Qoss 0.0210 at VGS = 10 V 36.5 100 % Rg and UIS Tested Material categorization 100 0.0230 at VGS = 7.5 V 35 10 nC For definitions of compliance please see 0.0260 at VGS = 6 V 3... See More ⇒
Detailed specifications: SISA04DN , SISA10DN , SISA12ADN , SISA12DN , SISA14DN , SISA18ADN , SISA18DN , SISS23DN , IRF740 , SIX3439K , SIZ300DT , SIZ340DT , SIZ342DT , SIZ702DT , SIZ704DT , SIZ710DT , 2SK1871 .
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