SIZ300DT MOSFET. Datasheet pdf. Equivalent
Type Designator: SIZ300DT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3.7 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V
Maximum Drain Current |Id|: 9.8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 7.4 nC
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 125 pF
Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm
Package: PowerPAIR3X3
SIZ300DT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIZ300DT Datasheet (PDF)
1.1. siz300dt.pdf 
Size:325K _update-mosfet
New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY • PowerPAIR Optimizes High-Side and Low-Side VDS (V) RDS(on) () MOSFETs for Synchronous Buck Converters ID (A)a Qg (Typ.) • TrenchFET® Power Mosfets 0.0240 at VGS = 10 V 11 Channel-1 30 3.5 nC • 100 % Rg and UIS Tested 0.0320 at VGS = 4.5 V 11 • Material categoriza
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
