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SIZ300DT Specs and Replacement


   Type Designator: SIZ300DT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   Qg ⓘ - Total Gate Charge: 7.4 nC
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: POWERPAIR3X3
 

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SIZ300DT datasheet

 ..1. Size:325K  vishay
 siz300dt.pdf pdf_icon

SIZ300DT

New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY PowerPAIR Optimizes High-Side and Low-Side VDS (V) RDS(on) ( ) MOSFETs for Synchronous Buck Converters ID (A)a Qg (Typ.) TrenchFET Power Mosfets 0.0240 at VGS = 10 V 11 Channel-1 30 3.5 nC 100 % Rg and UIS Tested 0.0320 at VGS = 4.5 V 11 Material categoriza... See More ⇒

Detailed specifications: SISA12ADN , SISA12DN , SISA14DN , SISA18ADN , SISA18DN , SISS23DN , SISS40DN , SIX3439K , 20N60 , SIZ340DT , SIZ342DT , SIZ702DT , SIZ704DT , SIZ710DT , 2SK1871 , 2SK2153 , 2SK2164 .

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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