SIZ300DT Specs and Replacement
Type Designator: SIZ300DT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: POWERPAIR3X3
SIZ300DT substitution
- MOSFET ⓘ Cross-Reference Search
SIZ300DT datasheet
siz300dt.pdf
New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY PowerPAIR Optimizes High-Side and Low-Side VDS (V) RDS(on) ( ) MOSFETs for Synchronous Buck Converters ID (A)a Qg (Typ.) TrenchFET Power Mosfets 0.0240 at VGS = 10 V 11 Channel-1 30 3.5 nC 100 % Rg and UIS Tested 0.0320 at VGS = 4.5 V 11 Material categoriza... See More ⇒
Detailed specifications: SISA12ADN , SISA12DN , SISA14DN , SISA18ADN , SISA18DN , SISS23DN , SISS40DN , SIX3439K , 20N60 , SIZ340DT , SIZ342DT , SIZ702DT , SIZ704DT , SIZ710DT , 2SK1871 , 2SK2153 , 2SK2164 .
Keywords - SIZ300DT MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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