SIZ342DT Datasheet and Replacement
Type Designator: SIZ342DT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 236 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: POWERPAIR3X3
SIZ342DT substitution
SIZ342DT Datasheet (PDF)
siz342dt.pdf

SiZ342DTwww.vishay.comVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY PowerPAIR optimizes high-side and low-side VDS (V) RDS(on) () MAX. ID (A) Qg (Typ.)MOSFETs for synchronous buck convertersChannel-1 0.0115 at VGS = 10 V 30 a TrenchFET Gen IV power MOSFETsand 30 4.5 nC0.0153 at VGS = 4.5 V 27.5Channel-2 100 % Rg and UIS tested
siz340dt.pdf

SiZ340DTwww.vishay.comVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY PowerPAIR Optimizes high-side andVDS (V) RDS(on) () MAX. ID (A) Qg (Typ.)low-side MOSFETs for synchronous buck 0.0095 at VGS = 10 V 30 a convertersChannel-1 30 5.6 nC0.0137 at VGS = 4.5 V 22 TrenchFET power Mosfets0.0051 at VGS = 10 V 100 % Rg and UIS tested
siz346dt.pdf

SiZ346DTwww.vishay.comVishay SiliconixDual N-Channel 30 V (D-S) MOSFETsFEATURESPowerPAIR 3 x 3G2S2 8 TrenchFET Gen IV power MOSFETsS2 7S2 6 100 % Rg and UIS tested5S1/D2 Optimized Qgs/Qgs ratio improves switching(Pin 9)D1 characteristics1 Material categorization:2G13D1 for definitions of compliance please see114D1www.vishay.co
Datasheet: SISA14DN , SISA18ADN , SISA18DN , SISS23DN , SISS40DN , SIX3439K , SIZ300DT , SIZ340DT , IRF540N , SIZ702DT , SIZ704DT , SIZ710DT , 2SK1871 , 2SK2153 , 2SK2164 , 2SK2317 , 2SK2318 .
History: SIZ704DT | NCEP072N10A
Keywords - SIZ342DT MOSFET datasheet
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History: SIZ704DT | NCEP072N10A



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