All MOSFET. SIZ342DT Datasheet

 

SIZ342DT MOSFET. Datasheet pdf. Equivalent

Type Designator: SIZ342DT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3.7 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V

Maximum Drain Current |Id|: 15.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10 nC

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 236 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0115 Ohm

Package: PowerPAIR3X3

SIZ342DT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIZ342DT Datasheet (PDF)

1.1. siz342dt.pdf Size:1261K _update-mosfet

SIZ342DT
SIZ342DT

SiZ342DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • PowerPAIR® optimizes high-side and low-side VDS (V) RDS(on) (Ω) MAX. ID (A) Qg (Typ.) MOSFETs for synchronous buck converters Channel-1 0.0115 at VGS = 10 V 30 a • TrenchFET® Gen IV power MOSFETs and 30 4.5 nC 0.0153 at VGS = 4.5 V 27.5 Channel-2 • 100 % Rg and UIS tested

5.1. siz340dt.pdf Size:362K _update-mosfet

SIZ342DT
SIZ342DT

SiZ340DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • PowerPAIR® Optimizes high-side and VDS (V) RDS(on) (Ω) MAX. ID (A) Qg (Typ.) low-side MOSFETs for synchronous buck 0.0095 at VGS = 10 V 30 a converters Channel-1 30 5.6 nC 0.0137 at VGS = 4.5 V 22 • TrenchFET® power Mosfets 0.0051 at VGS = 10 V • 100 % Rg and UIS tested

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
Back to Top

 


SIZ342DT
  SIZ342DT
  SIZ342DT
 

social 

LIST

Last Update

MOSFET: US6U37 | US6M2 | US6M11 | US6M1 | US6K4 | US6K2 | US6K1 | US6J11 | US5U38 | US5U35 | US5U30 | US5U3 | US5U29TR | US5U2 | US5U1 |

 

 

 
Back to Top