All MOSFET. SIZ710DT Datasheet

 

SIZ710DT Datasheet and Replacement


   Type Designator: SIZ710DT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: POWERPAIR6X3.7
 

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SIZ710DT Datasheet (PDF)

 ..1. Size:186K  vishay
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SIZ710DT

SiZ710DTVishay SiliconixN-Channel 20 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.) Definition TrenchFET Power MOSFETs0.0068 at VGS = 10 V 16aChannel-1 20 6.9 nC 100 % Rg and UIS Tested0.0090 at VGS = 4.5 V 16a Compliant to RoHS Directive 2002/95/EC0.0033 at VGS = 10 V 35aAP

Datasheet: SISS23DN , SISS40DN , SIX3439K , SIZ300DT , SIZ340DT , SIZ342DT , SIZ702DT , SIZ704DT , IRFZ44 , 2SK1871 , 2SK2153 , 2SK2164 , 2SK2317 , 2SK2318 , 2SK2321 , 2SK2403 , 2SK2432 .

History: IRFY130C | 2N5519 | 2N5907

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