All MOSFET. SIZ710DT Datasheet

 

SIZ710DT MOSFET. Datasheet pdf. Equivalent

Type Designator: SIZ710DT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3.9 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 11.5 nC

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 290 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0068 Ohm

Package: PowerPAIR6X3.7

SIZ710DT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIZ710DT Datasheet (PDF)

1.1. siz710dt.pdf Size:186K _update-mosfet

SIZ710DT SIZ710DT

SiZ710DT Vishay Siliconix N-Channel 20 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A) Qg (Typ.) Definition • TrenchFET® Power MOSFETs 0.0068 at VGS = 10 V 16a Channel-1 20 6.9 nC • 100 % Rg and UIS Tested 0.0090 at VGS = 4.5 V 16a • Compliant to RoHS Directive 2002/95/EC 0.0033 at VGS = 10 V 35a AP

1.2. siz710dt.pdf Size:169K _vishay

SIZ710DT SIZ710DT

 

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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