SIZ710DT MOSFET. Datasheet pdf. Equivalent
Type Designator: SIZ710DT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3.9 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V
Maximum Drain Current |Id|: 16 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 11.5 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 290 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0068 Ohm
Package: PowerPAIR6X3.7
SIZ710DT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIZ710DT Datasheet (PDF)
1.1. siz710dt.pdf 
Size:186K _update-mosfet
SiZ710DT Vishay Siliconix N-Channel 20 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A) Qg (Typ.) Definition • TrenchFET® Power MOSFETs 0.0068 at VGS = 10 V 16a Channel-1 20 6.9 nC • 100 % Rg and UIS Tested 0.0090 at VGS = 4.5 V 16a • Compliant to RoHS Directive 2002/95/EC 0.0033 at VGS = 10 V 35a AP
1.2. siz710dt.pdf Size:169K _vishay
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
