SIZ710DT Datasheet and Replacement
Type Designator: SIZ710DT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: POWERPAIR6X3.7
SIZ710DT substitution
SIZ710DT Datasheet (PDF)
siz710dt.pdf
SiZ710DTVishay SiliconixN-Channel 20 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.) Definition TrenchFET Power MOSFETs0.0068 at VGS = 10 V 16aChannel-1 20 6.9 nC 100 % Rg and UIS Tested0.0090 at VGS = 4.5 V 16a Compliant to RoHS Directive 2002/95/EC0.0033 at VGS = 10 V 35aAP
Datasheet: SISS23DN , SISS40DN , SIX3439K , SIZ300DT , SIZ340DT , SIZ342DT , SIZ702DT , SIZ704DT , IRF640 , 2SK1871 , 2SK2153 , 2SK2164 , 2SK2317 , 2SK2318 , 2SK2321 , 2SK2403 , 2SK2432 .
History: RFP40N10
Keywords - SIZ710DT MOSFET datasheet
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History: RFP40N10
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