SIZ710DT Datasheet. Specs and Replacement
Type Designator: SIZ710DT 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: POWERPAIR6X3.7
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SIZ710DT datasheet
siz710dt.pdf
SiZ710DT Vishay Siliconix N-Channel 20 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition TrenchFET Power MOSFETs 0.0068 at VGS = 10 V 16a Channel-1 20 6.9 nC 100 % Rg and UIS Tested 0.0090 at VGS = 4.5 V 16a Compliant to RoHS Directive 2002/95/EC 0.0033 at VGS = 10 V 35a AP... See More ⇒
Detailed specifications: SISS23DN, SISS40DN, SIX3439K, SIZ300DT, SIZ340DT, SIZ342DT, SIZ702DT, SIZ704DT, IRFZ44, 2SK1871, 2SK2153, 2SK2164, 2SK2317, 2SK2318, 2SK2321, 2SK2403, 2SK2432
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