All MOSFET. RFF60P06 Datasheet

 

RFF60P06 Datasheet and Replacement


   Type Designator: RFF60P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO254AA
 

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RFF60P06 Datasheet (PDF)

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RFF60P06

RFF60P06Data Sheet September 1998 File Number 3975.225A, 60V, 0.030 Ohm, P-Channel Power FeaturesMOSFET 25A, 60VThe RFF60P06 P-Channel power MOSFET is manufactured rDS(ON) = 0.030using the MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI circuits givesoptimum utilization of silicon, resulti

Datasheet: RFD7N10LE , RFD7N10LESM , RFD8P05 , RFD8P05SM , RFD8P06E , RFD8P06ESM , RFD8P06LE , RFD8P06LESM , IRFP250N , RFF70N06 , RFG30P05 , RFG30P06 , RFG40N10 , RFG40N10LE , RFG45N06 , RFG45N06LE , RFG50N05L .

History: SFB053N100C3 | APT1001RSLC | IRFN140SMD | IRHM9160 | STD3NK80Z | RUH40E12C | AOCA33102E

Keywords - RFF60P06 MOSFET datasheet

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