RFF60P06 Specs and Replacement

Type Designator: RFF60P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 1800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO254AA

RFF60P06 substitution

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RFF60P06 datasheet

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RFF60P06

RFF60P06 Data Sheet September 1998 File Number 3975.2 25A , 60V, 0.030 Ohm, P-Channel Power Features MOSFET 25A, 60V The RFF60P06 P-Channel power MOSFET is manufactured rDS(ON) = 0.030 using the MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulti... See More ⇒

Detailed specifications: RFD7N10LE, RFD7N10LESM, RFD8P05, RFD8P05SM, RFD8P06E, RFD8P06ESM, RFD8P06LE, RFD8P06LESM, IRFB4115, RFF70N06, RFG30P05, RFG30P06, RFG40N10, RFG40N10LE, RFG45N06, RFG45N06LE, RFG50N05L

Keywords - RFF60P06 MOSFET specs

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