RFF70N06 Specs and Replacement

Type Designator: RFF70N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO254AA

RFF70N06 substitution

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RFF70N06 datasheet

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 rff70n06.pdf pdf_icon

RFF70N06

RFF70N06 Data Sheet March 1999 File Number 4073.2 25A, 60V, 0.025 Ohm, N-Channel Power Features MOSFET 25A , 60V The RFF70N06 N-Channel power MOSFET is manufactured rDS(ON) = 0.025 using the MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting ... See More ⇒

Detailed specifications: RFD7N10LESM, RFD8P05, RFD8P05SM, RFD8P06E, RFD8P06ESM, RFD8P06LE, RFD8P06LESM, RFF60P06, 2N7000, RFG30P05, RFG30P06, RFG40N10, RFG40N10LE, RFG45N06, RFG45N06LE, RFG50N05L, RFG50N06

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