All MOSFET. RFF70N06 Datasheet

 

RFF70N06 Datasheet and Replacement


   Type Designator: RFF70N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO254AA
 

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RFF70N06 Datasheet (PDF)

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RFF70N06

RFF70N06Data Sheet March 1999 File Number 4073.225A, 60V, 0.025 Ohm, N-Channel Power FeaturesMOSFET 25A, 60VThe RFF70N06 N-Channel power MOSFET is manufactured rDS(ON) = 0.025using the MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI circuits givesoptimum utilization of silicon, resulting

Datasheet: RFD7N10LESM , RFD8P05 , RFD8P05SM , RFD8P06E , RFD8P06ESM , RFD8P06LE , RFD8P06LESM , RFF60P06 , IRFP250N , RFG30P05 , RFG30P06 , RFG40N10 , RFG40N10LE , RFG45N06 , RFG45N06LE , RFG50N05L , RFG50N06 .

History: IRLL014PBF

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