FW206 Specs and Replacement
Type Designator: FW206
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 300 nS
Cossⓘ - Output Capacitance: 340 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm
Package: SOP8
FW206 substitution
- MOSFET ⓘ Cross-Reference Search
FW206 datasheet
fw206.pdf
FW206 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features High density mounting is possible because of the complex type which holds two chips of a low on-resistance, Very-high speed switching and 4-volt-drive, N channel MOSFET in one package. The two chips have near characteristics Absolute Maximum Ratings / Ta=25 C unit Drain to Source V... See More ⇒
Detailed specifications: 2SK2637, 2SK2773, DG10N60, DG10N60-TO220F, FS1KM-18A, FW201, FW202, FW203, 12N60, GP28S50XN220, GP28S50XN220FP, GP28S50XN3P, GP28S50XN247, GP28S50GN220, GP28S50GN220FP, GP28S50GN3P, GP28S50GN247
Keywords - FW206 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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