FW206 Datasheet and Replacement
Type Designator: FW206
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 300 nS
Cossⓘ - Output Capacitance: 340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm
Package: SOP8
FW206 substitution
FW206 Datasheet (PDF)
fw206.pdf

FW206N- Channel Silicon MOS FETVery High-Speed Switching ApplicationsTENTATIVEFeatures High density mounting is possible because of the complex type which holds two chips of a low on-resistance,Very-high speed switching and 4-volt-drive, N channel MOSFET in one package. The two chips have near characteristics Absolute Maximum Ratings / Ta=25CunitDrain to Source V
Datasheet: 2SK2637 , 2SK2773 , DG10N60 , DG10N60-TO220F , FS1KM-18A , FW201 , FW202 , FW203 , 4N60 , GP28S50XN220 , GP28S50XN220FP , GP28S50XN3P , GP28S50XN247 , GP28S50GN220 , GP28S50GN220FP , GP28S50GN3P , GP28S50GN247 .
History: CMD5941 | APT12045L2VFRG | SWI085R06VS | IRFB9N60APBF
Keywords - FW206 MOSFET datasheet
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History: CMD5941 | APT12045L2VFRG | SWI085R06VS | IRFB9N60APBF



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