GP28S50XN3P PDF and Equivalents Search

 

GP28S50XN3P Specs and Replacement

Type Designator: GP28S50XN3P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 255 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 104.5 nS

Cossⓘ - Output Capacitance: 1766.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO3P

GP28S50XN3P substitution

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GP28S50XN3P datasheet

 7.1. Size:495K  champion
 gp28s50.pdf pdf_icon

GP28S50XN3P

GP28S50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to wi... See More ⇒

Detailed specifications: DG10N60-TO220F, FS1KM-18A, FW201, FW202, FW203, FW206, GP28S50XN220, GP28S50XN220FP, IRFB3607, GP28S50XN247, GP28S50GN220, GP28S50GN220FP, GP28S50GN3P, GP28S50GN247, IPA70R360P7S, IPSA70R360P7S, IRF50N06

Keywords - GP28S50XN3P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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