All MOSFET. GP28S50GN3P Datasheet

 

GP28S50GN3P Datasheet and Replacement


   Type Designator: GP28S50GN3P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 255 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 104.5 nS
   Cossⓘ - Output Capacitance: 1766.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO3P
 

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GP28S50GN3P Datasheet (PDF)

 7.1. Size:495K  champion
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GP28S50GN3P

GP28S50POWER FIELD EFFECT TRANSISTORGENERAL DESCRIPTION FEATURESThis high voltage MOSFET uses an advanced termination Robust High Voltage Terminationscheme to provide enhanced voltage-blocking capability Avalanche Energy Specifiedwithout degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to aadvanced MOSFET is designed to wi

Datasheet: FW203 , FW206 , GP28S50XN220 , GP28S50XN220FP , GP28S50XN3P , GP28S50XN247 , GP28S50GN220 , GP28S50GN220FP , IRFP450 , GP28S50GN247 , IPA70R360P7S , IPSA70R360P7S , IRF50N06 , TK80E08K3 , TK150E09NE , TSA9N90M , SIZ728DT .

History: SIHG24N65E

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