IRF50N06 PDF and Equivalents Search

 

IRF50N06 Specs and Replacement

Type Designator: IRF50N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 91 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO220

IRF50N06 substitution

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IRF50N06 datasheet

 ..1. Size:120K  china
 irf50n06.pdf pdf_icon

IRF50N06

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Detailed specifications: GP28S50XN3P, GP28S50XN247, GP28S50GN220, GP28S50GN220FP, GP28S50GN3P, GP28S50GN247, IPA70R360P7S, IPSA70R360P7S, TK10A60D, TK80E08K3, TK150E09NE, TSA9N90M, SIZ728DT, SIZ730DT, SIZ790DT, SIZ900DT, SIZ902DT

Keywords - IRF50N06 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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