All MOSFET. IRF50N06 Datasheet

 

IRF50N06 Datasheet and Replacement


   Type Designator: IRF50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 91 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO220
 

 IRF50N06 substitution

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IRF50N06 Datasheet (PDF)

 ..1. Size:120K  china
 irf50n06.pdf pdf_icon

IRF50N06

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Datasheet: GP28S50XN3P , GP28S50XN247 , GP28S50GN220 , GP28S50GN220FP , GP28S50GN3P , GP28S50GN247 , IPA70R360P7S , IPSA70R360P7S , IRFZ24N , TK80E08K3 , TK150E09NE , TSA9N90M , SIZ728DT , SIZ730DT , SIZ790DT , SIZ900DT , SIZ902DT .

History: WMJ28N60F2 | SWD4N65K2 | 60N10E | STS65R580MJS2 | MTP10N10 | NTTFS002N04C | STP270N8F7

Keywords - IRF50N06 MOSFET datasheet

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