All MOSFET. IRF50N06 Datasheet

 

IRF50N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 91 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO220

 IRF50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF50N06 Datasheet (PDF)

 ..1. Size:120K  china
 irf50n06.pdf

IRF50N06 IRF50N06

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF540ZP | FK4B0112 | MTN4N01Q8 | FDME1024NZT | IXFH12N100 | FQA11N90F109 | SI8205A

 

 
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