All MOSFET. IRF50N06 Datasheet

 

IRF50N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 50 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 50 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 23 nC
   Rise Time (tr): 91 nS
   Drain-Source Capacitance (Cd): 260 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
   Package: TO220

 IRF50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF50N06 Datasheet (PDF)

 ..1. Size:120K  china
 irf50n06.pdf

IRF50N06 IRF50N06

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPW90R120C3

 

 
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