All MOSFET. TK80E08K3 Datasheet

 

TK80E08K3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK80E08K3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220AB

 TK80E08K3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK80E08K3 Datasheet (PDF)

 ..1. Size:179K  toshiba
 tk80e08k3.pdf

TK80E08K3 TK80E08K3

Target SpecificationTK80E08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TK80E08K3 E-Bike/UPS/Inverter Unit: mm Low drain-source ON resistance : RDS (ON) = 7.5 m (typ.) High forward transfer admittance : |Yfs| = 135 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 75 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 8.1. Size:235K  toshiba
 tk80e06k3a.pdf

TK80E08K3 TK80E08K3

TK80E06K3AMOSFETs Silicon N-channel MOS (U-MOS )TK80E06K3ATK80E06K3ATK80E06K3ATK80E06K3A1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 4.8 m (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3) Enhancement mo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: PSMN0R7-25YLD

 

 
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