TK80E08K3 MOSFET Datasheet: N-Ch, 75V, 80A. Full specification with pinout and replacement list

TK80E08K3 Specs and Replacement

Type Designator: TK80E08K3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220AB

TK80E08K3 substitution

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TK80E08K3 datasheet

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Target Specification TK80E08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TK80E08K3 E-Bike/UPS/Inverter Unit mm Low drain-source ON resistance RDS (ON) = 7.5 m (typ.) High forward transfer admittance Yfs = 135 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 75 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) ... See More ⇒

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TK80E06K3A MOSFETs Silicon N-channel MOS (U-MOS ) TK80E06K3A TK80E06K3A TK80E06K3A TK80E06K3A 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 4.8 m (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3) Enhancement mo... See More ⇒

Detailed specifications: GP28S50XN247, GP28S50GN220, GP28S50GN220FP, GP28S50GN3P, GP28S50GN247, IPA70R360P7S, IPSA70R360P7S, IRF50N06, AO4407, TK150E09NE, TSA9N90M, SIZ728DT, SIZ730DT, SIZ790DT, SIZ900DT, SIZ902DT, SIZ904DT