All MOSFET. TSA9N90M Datasheet

 

TSA9N90M Datasheet and Replacement


   Type Designator: TSA9N90M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO3P
 

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TSA9N90M Datasheet (PDF)

 ..1. Size:751K  truesemi
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TSA9N90M

TSA9N90M 900V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 9.0A,900V,Max.RDS(on)=1.40 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 52nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

Datasheet: GP28S50GN220FP , GP28S50GN3P , GP28S50GN247 , IPA70R360P7S , IPSA70R360P7S , IRF50N06 , TK80E08K3 , TK150E09NE , 2SK3568 , SIZ728DT , SIZ730DT , SIZ790DT , SIZ900DT , SIZ902DT , SIZ904DT , SIZ910DT , SIZ914DT .

History: 2P7154VC | TMP160N08A | 2SK3818 | S10H12S | 45N06 | 2SK3819 | FDS89141

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