TSA9N90M PDF and Equivalents Search

 

TSA9N90M Specs and Replacement

Type Designator: TSA9N90M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO3P

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TSA9N90M datasheet

 ..1. Size:751K  truesemi
 tsa9n90m.pdf pdf_icon

TSA9N90M

TSA9N90M 900V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 9.0A,900V,Max.RDS(on)=1.40 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 52nC) minimize on-state resistance, provide superior switching High ruggedness performance, and... See More ⇒

Detailed specifications: GP28S50GN220FP, GP28S50GN3P, GP28S50GN247, IPA70R360P7S, IPSA70R360P7S, IRF50N06, TK80E08K3, TK150E09NE, 4N60, SIZ728DT, SIZ730DT, SIZ790DT, SIZ900DT, SIZ902DT, SIZ904DT, SIZ910DT, SIZ914DT

Keywords - TSA9N90M MOSFET specs

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