TSA9N90M Datasheet and Replacement
Type Designator: TSA9N90M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 175 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO3P
TSA9N90M Datasheet (PDF)
tsa9n90m.pdf

TSA9N90M 900V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 9.0A,900V,Max.RDS(on)=1.40 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 52nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and
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